BUK463-60A Philips Semiconductors, BUK463-60A Datasheet

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BUK463-60A

Manufacturer Part Number
BUK463-60A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
July 1995
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL
R
R
D
D
DM
PIN
V
DS
DGR
tot
stg
j
mb
th j-mb
th j-a
1
2
3
GS
gate
drain
source
drain
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
DS
tot
j
DS(ON)
1
CONDITIONS
-
R
-
T
T
T
T
-
-
CONDITIONS
-
minimum footprint,
FR4 board (see Fig. 18).
2
mb
mb
mb
mb
GS
= 25 ˚C
3
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
1
mb
MIN.
- 55
BUK463
-
-
-
-
-
-
-
-
SYMBOL
-60A
22
15
88
MAX.
-60A
0.08
175
60
22
75
MAX.
g
175
175
TYP.
60
60
30
75
50
Product Specification
-
BUK463-60A/B
-60B
20
14
80
MAX.
-60B
0.10
d
175
s
MAX.
60
20
75
2.0
-
Rev 1.000
UNIT
UNIT
UNIT
˚C
˚C
W
K/W
K/W
V
V
V
A
A
A
˚C
W
V
A

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BUK463-60A Summary of contents

Page 1

... CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS - minimum footprint, FR4 board (see Fig. 18). 1 Product Specification BUK463-60A/B MAX. MAX. UNIT -60A -60B 175 175 0.08 0.10 SYMBOL MAX. UNIT - ...

Page 2

... CONDITIONS - - -dI /dt = 100 CONDITIONS Product Specification BUK463-60A/B MIN. TYP. MAX. UNIT 2.1 3.0 4 0.1 1 100 nA - 0.07 0.08 - 0.08 0.10 MIN. ...

Page 3

... Fig.5. Typical output characteristics BUK453-60 0.5 0.4 0 0.2 100 0 100 ms 0 100 = 25 ˚C Fig.6. Typical on-state resistance Product Specification BUK463-60A/B Zth j-mb / (K/W) ZTHX53 0.5 0.2 0 1E-07 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j- ...

Page 4

... 10000 1000 100 100 140 180 Fig.12. Typical capacitances f Product Specification BUK463-60A/B VGS(TO max. typ. min. - 100 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION 2 % typ ...

Page 5

... VDS / V =10 100 Fig.15. Normalised avalanche energy rating. DS BUK453-50A VGS Fig.16. Avalanche energy test circuit Product Specification BUK463-60A/B WDSS 100 120 140 160 Tmb / f(T ); conditions DSS VDS - T.U. RGS shunt ...

Page 6

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". July 1995 10.3 max 11 max 15.4 0.85 max (x2) Fig.17. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.18. SOT404 : soldering pattern for surface mounting . 6 Product Specification BUK463-60A/B 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1995 7 Product Specification BUK463-60A/B Rev 1.000 ...

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