GAL22LV10D-5LJ Lattice Semiconductor Corp., GAL22LV10D-5LJ Datasheet

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GAL22LV10D-5LJ

Manufacturer Part Number
GAL22LV10D-5LJ
Description
Manufacturer
Lattice Semiconductor Corp.
Datasheets

Specifications of GAL22LV10D-5LJ

Date_code
06

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• HIGH PERFORMANCE E
• 3.3V LOW VOLTAGE 22V10 ARCHITECTURE
• ACTIVE PULL-UPS ON ALL PINS (GAL22LV10D)
• E
• TEN OUTPUT LOGIC MACROCELLS
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
• APPLICATIONS INCLUDE:
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
The GAL22LV10D, at 4 ns maximum propagation delay time,
provides the highest speed performance available in the PLD
market. The GAL22LV10C can interface with both 3.3V and 5V
signal levels. The GAL22LV10 is manufactured using Lattice
Semiconductor's advanced 3.3V E
bines CMOS with Electrically Erasable (E
ogy. High speed erase times (<100ms) allow the devices to be
reprogrammed quickly and efficiently.
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user.
Unique test circuitry and reprogrammable cells allow complete
AC, DC, and functional testing during manufacture. As a result,
Lattice Semiconductor delivers 100% field programmability and
functionality of all GAL products. In addition, 100 erase/write
cycles and data retention in excess of 20 years are specified.
Copyright © 1997 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 681-0118; 1-888-ISP-PLDS; FAX (503) 681-3037; http://www.latticesemi.com
22lv10_03
DESCRIPTION
FEATURES
— 4 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3 ns Maximum from Clock Input to Data Output
— UltraMOS
— JEDEC-Compatible 3.3V Interface Standard
— 5V Compatible Inputs
— I/O Interfaces with Standard 5V TTL Devices
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
— Maximum Flexibility for Complex Logic Designs
— Programmable Output Polarity
— 100% Functional Testability
— Glue Logic for 3.3V Systems
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
2
CELL TECHNOLOGY
(GAL22LV10C)
®
Advanced CMOS Technology
2
CMOS
2
CMOS process, which com-
®
TECHNOLOGY
2
) floating gate technol-
1
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
I/CLK
I
I
I
I
I
I
I
I
I
I
I
NC
I
I
I
I
I
I
11
5
7
9
12
4
GAL22LV10
Low Voltage E
14
2
Top View
GAL22LV10
PLCC
Generic Array Logic™
28
16
PRESET
RESET
10
12
14
16
16
12
10
14
8
8
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
26
18
25
23
21
19
2
CMOS PLD
I/O/Q
I/O/Q
I/O/Q
NC
I/O/Q
I/O/Q
I/O/Q
July 1997
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q

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