EPC-1300-0.22-1 EPIGAP [EPIGAP optoelectronic GmbH], EPC-1300-0.22-1 Datasheet

EPC-1300-0.22-1

Manufacturer Part Number

EPC-1300-0.22-1

Description

Photodiode-Chip

Manufacturer

EPIGAP [EPIGAP optoelectronic GmbH]

Datasheet

1.EPC-1300-0.22-1.pdf (2 pages)

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Miscellaneous Parameters

Optical and Electrical Characteristics

Labeling

Packing: Chips on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

Photodiode-Chip

Active area

Operating temperature range

Storage temperature range

Temperature coefficient of I

Forward voltage

Breakdown voltage

Sensitivity range at 10 %

Spectral bandwidth at 50 %

Responsivity at 1300 nm

Dark current

Shunt resistance

Noise equivalent power

Specific detectivity

Junction capacitance

Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.

amb

measured on bare chip on TO-18 header

for information only

= 25° C, unless otherwise specified

Wavelength range

EPС-1300-0.22-1

Parameter

Infrared

Type

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameter

110

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

460 ±20

220

Typ. I

conditions

= 1300 nm

=1300 nm

= 10 mA

= 10 µA

= 10 mV

Test

= 0 V

= 5 V

= 0 V

100

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

[pA]

Planar

Type

Typ. S

Symbol

∆

NEP

T = -40…120° C

Test сonditions

0,5

[A/W]

*also pin 2, for measuring

purposes

typ. dimensions in µm

typ. thickness

330 ( 20) µm

anode (pin 1)

bond gold 1.0 µm

cathode (rear*)

gold alloy, 0.5 µm

Min

800

Technology

InGaAs/InP

Lot N°

16.05.2008

4.0x10

4.5x10

Symbol

Typ

680

1.7

0.9

amb

stg

)

-15

Description

Infrared-selective photodiode

with response range in the

NIR-region (800 - 1750 nm)

Applications

Optical communications,

safety equipment, light

barriers

EPC-1300-0.22-1

-40 to +125

Value

0.032

1750

Max

200

7.4

P (anode) up

rev. 08

Electrodes

Quantity

mm²

A/W

Unit

%/K

Unit

° C

1 of 2

Related parts for EPC-1300-0.22-1

EPC-1300-0.22-1 Summary of contents

Page 1

... NEP D* = 1300 [pA] Typ. S [A/W] D λ Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 EPC-1300-0.22-1 16.05.2008 rev. 08 Technology Electrodes InGaAs/InP P (anode) up Description Infrared-selective photodiode with response range in the NIR-region (800 - 1750 nm) Applications Optical communications, safety equipment, light barriers Symbol ...

Page 2

... [°C ] Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 EPC-1300-0.22-1 16.05.2008 rev ...

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