K4S560432A-TC/L1H SAMSUNG [Samsung semiconductor], K4S560432A-TC/L1H Datasheet - Page 4

• Manufacturer Part Number: K4S560432A-TC/L1H
• Description: 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
Note :
K4S560432A
DC OPERATING CONDITIONS
Notes :
(Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Notes :
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
1. V
2. V
3. Any input 0V
Parameter
15
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC.The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ
V
Symbol
DD
.
A
V
V
V
V
, V
I
= 23 C, f = 1MHz, V
OH
OL
LI
IH
IL
DDQ
Symbol
C
C
V
C
V
Min
-0.3
C
Symbol
-10
3.0
2.0
2.4
DD
ADD
OUT
CLK
IN
-
IN
T
, V
I
, V
P
STG
OS
D
REF
OUT
DDQ
SS
=1.4V
= 0V, T
3ns.
3ns.
Typ
3.3
3.0
Min
A
0
200 mV)
2.5
2.5
2.5
4.0
-
-
-
= 0 to 70 C)
V
DD
Max
3.6
0.8
0.4
-55 ~ +150
10
-1.0 ~ 4.6
-1.0 ~ 4.6
-
+0.3
Max
4.0
5.0
5.0
6.5
Value
50
1
Unit
uA
V
V
V
V
V
Rev. 0.0 Sep. 1999
Unit
CMOS SDRAM
pF
pF
pF
pF
I
OH
I
OL
Unit
mA
W
Note
V
V
C
= -2mA
= 2mA
1
2
3
Note
1
2
2
3