K4S641633H-F1H SAMSUNG [Samsung semiconductor], K4S641633H-F1H Datasheet - Page 10

• Manufacturer Part Number: K4S641633H-F1H
• Description: 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S641633H - R(B)E/N/G/C/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Function
Function
A8
A9
Address
0
0
1
1
0
1
Address
BA1
A11~A10/AP
0
0
1
1
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
Mode Register Set
BA1
0
1
0
1
Single Bit
Mode Select
Length
"0" Setting for
Burst
Normal MRS
Reserved
Reserved
Reserved
BA0 ~ BA1
Mode Select
Type
BA0
EMRS for Mobile SDRAM
A9
0
Normal MRS
A11 ~ A10/AP
Reserved
Reserved
Reserved Address
Mode
A6
0
0
0
0
1
1
1
1
A11 ~ A10/AP
A8
0
RFU
A5
0
0
1
1
0
0
1
1
CAS Latency
*1
A4
0
1
0
1
0
1
0
1
RFU
A9
A7
0
*1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
A6
W.B.L
0
0
1
1
A9
1
2
3
*2
A8
A5
Driver Strength
0
1
0
1
A4
A8
Test Mode
0
BA1 BA0
A3
0
1
0
A7
Driver Strength
Mode Select
Reserved
Reserved
Burst Type
A7
0
Full
1/2
Sequential
Interleave
A6
Type
A3
0
mal MRS
for Nor-
Setting
A6
DS
Mode
CAS Latency
A5
A2
A5
0
0
0
0
1
1
1
1
A2
0
0
0
0
1
1
1
1
A4
A1
0
0
1
1
0
0
1
1
RFU
A4
A1
0
0
1
1
0
0
1
1
A0
0
1
0
1
0
1
0
1
*1
Full Page Length x16 : 64Mb(256)
A3
Mobile-SDRAM
A0
A3
BT
Burst Length
0
1
0
1
0
1
0
1
Size of Refreshed Array
PASR
Reserved
Reserved
Reserved
Full Page
A2
1/2 of Full Array
1/4 of Full Array
BT=0
A2
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
Burst Length
PASR
February 2004
A1
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0