K4S641633H-F1H SAMSUNG [Samsung semiconductor], K4S641633H-F1H Datasheet - Page 6

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K4S641633H-F1H

Manufacturer Part Number
K4S641633H-F1H
Description
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K4S641633H - R(B)E/N/G/C/L/F
AC OPERATING TEST CONDITIONS
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Figure 1. DC Output Load Circuit
870Ω
Parameter
VDDQ
1200Ω
30pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
(V
DD
= 2.7V ∼ 3.6V, T
Output
See Figure 2
0.5 x V
0.5 x V
tr/tf = 1/1
2.4 / 0.4
Value
A
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
Figure 2. AC Output Load Circuit
DDQ
DDQ
Z0=50Ω
Mobile-SDRAM
Vtt=0.5 x VDDQ
50Ω
30pF
Unit
ns
February 2004
V
V
V

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