HFD1N65 SEMIHOW [SemiHow Co.,Ltd.], HFD1N65 Datasheet - Page 3

• Manufacturer Part Number: HFD1N65
• Description: 650V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
250
200
150
100
40
35
30
25
20
15
10
50
0
10
0.0
Figure 3. On Resistance Variation vs
-1
Figure 5. Capacitance Characteristics
Figure 1. On Region Characteristics
Drain Current and Gate Voltage
0.5
V
DS
1.0
, Drain-Source Voltage [V]
V
I
D
GS
10
, Drain Current [A]
0
= 20V
C
C
C
iss
oss
rss
V
GS
1.5
= 10V
2.0
C
C
C
iss
oss
rss
= C
= C
※ Note : T
= C
10
gs
gd
ds
1
+ C
+ C
※ Note ;
gd
gd
2.5
1. V
2. f = 1 MHz
J
(C
= 25 ℃
ds
GS
= shorted)
= 0 V
3.0
12
10
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
1
Q
and Temperature
G
V
, Total Gate Charge [nC]
DS
V
V
DS
DS
= 520V
2
= 325V
= 130V
3
※ Notes : I
◎ SEMIHOW REV.A0,Apr 2006
4
D
= 0.8 A
5