HFD1N65 SEMIHOW [SemiHow Co.,Ltd.], HFD1N65 Datasheet - Page 4

• Manufacturer Part Number: HFD1N65
• Description: 650V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
10
10
10
10
-1
-2
1
0
10
0
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
V
DS
10
vs Temperature
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
10
1
10
1. T
2. T
3. Single Pulse
-1
0
10
C
J
= 150
= 25
-5
D=0.5
0.02
o
0.01
C
0.05
o
0.1
C
0.2
DS(on)
Figure 11. Transient Thermal Response Curve
(continued)
10
DC
10
2
-4
10 ms
single pulse
t
1
, Square Wave Pulse Duration [sec]
1 ms
100 µs
10
-3
10
3
10
-2
1.0
0.8
0.6
0.4
0.2
0.0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
P
※ Notes :
10
DM
1. Z
2. Duty Factor, D=t
3. T
-1
θ JC
JM
(t) = 4.0 ℃/ W Max.
- T
50
C
= P
t
1
T
t
DM
10
2
C
vs Temperature
vs Case Temperature
, Case Temperature [ ℃]
* Z
0
1
θ JC
75
/t
2
(t)
10
100
1
◎ SEMIHOW REV.A0,Apr 2006
125
150