SCH4C60S WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd], SCH4C60S Datasheet - Page 2

• Manufacturer Part Number: SCH4C60S
• Description: Silicon Controlled Rectifiers
• Manufacturer: WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

Symbol
Symbol
Symbol
Symbol
I
V
I
V
V
dv/dt
I
I
R
DRM
GT
H
L
Electrical
Electrical
Note:
Note:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. R
Electrical
Electrical Characteristics
TM
GT
GD
Note:
Note:
d
GK
Current not Included in measurement
Repetitive Peak Off-State Current
Peak On-State Voltage (1)
Gate Trigger Current (2)
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State Voltage
Dynamic resistance
Holding Current
Latching Current
Characteristics
Characteristics
Characteristics
Parameter
Parameter
Parameter
Parameter
(T
C
=25
℃
unless otherwise noted)
VAK=VDRM RGK=1KΩ
ITM=8A, tp=380㎲
VD=12V,RL=140
VD=12V,RL=3.3KΩ, RGK=1 KΩ
VD=67%V
IT=50mA, RGK=1 KΩ
IT=1mA, RGK=1 KΩ
Tj=125°C
Test
Test
Test
Test Conditions
DRM
, RGK=1 KΩ
Conditions
Conditions
Conditions
SCH4C60S
Min
Min
Min
Min
0.1
20
15
6
-
-
-
-
-
-
Value
Value
Value
Value
Typ
Typ
Typ
Typ
-
-
-
-
-
-
-
-
-
Max
Max
Max
Max
100
1.8
0.8
50
5
1
5
-
-
Units
Units
Units
Units
V/㎲
mA
mΩ
μA
μA
mA
mA
2/5
V
V
V