SBR13003B3 WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd], SBR13003B3 Datasheet
SBR13003B3
Related parts for SBR13003B3
SBR13003B3 Summary of contents
Page 1
... Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol R Thermal Resistance Junction to Case θJc R Thermal Resistance Junction to Ambient θJA Jan 2009. Rev. 0 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBR13003B3 Test Conditions 5ms ...
Page 2
Electrical Characteristics Symbol Parameter V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 CEO(sus) V Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter Saturation Voltage BE(sat) Collector-Base Cutoff Current I CBO (Vbe=-1.5V Current Gain FE Resistive Load ton Turn-on Time ts Storage Time tf ...
Page 3
... Fig Current Gain Fig. 3 Switching Time Fig.5 Power Derating SBR13003B3 Fig. 2 Saturation Voltage Fig. 4 Safe Operation Area 3/5 ...
Page 4
Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . ...
Page 5
... TO-126 Package Dimension 1 3 SBR13003B3 5/5 ...