THN6201E TACHYONICS [Tachyonics CO,. LTD], THN6201E Datasheet

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THN6201E

Manufacturer Part Number
THN6201E
Description
NPN SiGe RF TRANSISTOR
Manufacturer
TACHYONICS [Tachyonics CO,. LTD]
Datasheet
1.THN6201E.pdf (13 pages)
□ Applications
□ Features
□ h
□ Absolute Maximum Ratings
Caution : ESD sensitive device
LNA and wide band amplifier up to GHz range
o Low Noise Figure
o High Power Gain
o High Transition Frequency
www.tachyonics.co.kr
Symbol
MAG = 18.5 dB Typ. @ f = 1 GHz, V
f
h
V
V
NF = 1.1 dB Typ. @ f = 1 GHz, V
NF = 1.5 dB Typ. @ f = 2 GHz, V
T
V
NPN SiGe RF TRANSISTOR
T
Marking
FE
FE
P
T
CBO
CEO
EBO
I
STG
= 12 GHz Typ. @ V
C
T
J
Classification
Value 125 to 300
13 dB Typ. @ f = 2 GHz, V
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
AC1
CE
= 3 V, I
80 to 160
AC2
Parameter
C
= 15 mA
CE
CE
CE
= 3 V, I
= 3 V, I
CE
= 3 V, I
= 3 V, I
C
C
- 1/13 -
C
= 5 mA
= 5 mA
= 15 mA
C
= 15 mA
Pin Configuration
□ Available Package
THN6201KF
THN6201U
THN6201S
THN6201Z
THN6201E
SOT 523
Product
Pin No
1
2
3
-65 ~ 150
Ratings
150
150
2.5
20
12
35
SOT623F
Package
SOT323 2.0ⅹ1.25, 1.0t
SOT343 2.0ⅹ1.25, 1.0t
SOT523
SOT23
Symbol
THN6201 series
C
B
E
Unit in mm
2.9ⅹ1.3, 1.2t
1.6ⅹ0.8, 0.8t
1.4ⅹ0.8, 0.6t
Dimension
Description
Aug.-2005
Collector
Unit : mm
Emitter
Base
Rev 2.0
Unit
mW
mA
℃
℃
V
V
V

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THN6201E Summary of contents

Page 1

... Pin Configuration Pin No Symbol Description □ Available Package Package Dimension Product SOT23 THN6201S 2.9ⅹ1.3, 1.2t SOT323 2.0ⅹ1.25, 1.0t THN6201U SOT343 2.0ⅹ1.25, 1.0t THN6201Z SOT523 THN6201E 1.6ⅹ0.8, 0.8t SOT623F THN6201KF 1.4ⅹ0.8, 0.6t Ratings 20 12 2.5 35 150 -65 ~ 150 150 Base Emitter Collector Unit : mm Unit ℃ ...

Page 2

Electrical Characteristics ( T Symbol Parameter I Collector Cut-off Current CBO I CEO I Emitter Cut-off Current EBO h DC Current Gain FE f Transition Frequency T C Collector to Base Capacitance Insertion Power Gain ...

Page 3

Total Power Dissipation, P 250 200 150 100 Ambient Temperature vs 0.0 0.2 0.4 0.6 V [V] BE www.tachyonics.co.kr ...

Page 4

Maximum Available Gain, MAG vs. Frequency 0.0 0.5 1.0 1.5 freq, GHz Frequency [GHz] Maximum Available Gain, MAG vs. I ...

Page 5

Transition Frequency [mA vs parameter 2 GHz ...

Page 6

Dimensions of THN6201S in mm SOT 23 □ Dimensions of THN6201KF in mm SOT 623F 1.2 0 Pin Configuration (SOT 23, SOT 323, SOT 623F) Pin No Symbol www.tachyonics.co.kr □ ...

Page 7

Common Emitter S-Parameter Data freq S(1,1) 400.0MHz 0.721 / -74.320 600.0MHz 0.628 / -97.230 800.0MHz 0.568 / -115.746 1.000GHz 0.545 / -130.082 1.200GHz 0.539 / -138.346 1.400GHz 0.525 ...

Page 8

freq S(1,1) 400.0MHz 0.486 / -138.093 600.0MHz 0.470 / -154.631 800.0MHz 0.467 / -165.767 1.000GHz 0.476 / -174.312 1.200GHz 0.481 / -176.471 1.400GHz 0.488 / 179.054 1.600GHz 0.495 / ...

Page 9

freq S(1,1) 400.0MHz 0.728 / -72.330 600.0MHz 0.641 / -96.126 800.0MHz 0.569 / -113.287 1.000GHz 0.547 / -127.195 1.200GHz 0.537 / -136.216 1.400GHz 0.525 / -145.214 1.600GHz 0.524 / ...

Page 10

freq S(1,1) 400.0MHz 0.486 / -134.199 600.0MHz 0.474 / -152.394 800.0MHz 0.461 / -164.176 1.000GHz 0.464 / -172.265 1.200GHz 0.472 / -175.228 1.400GHz 0.477 / 179.989 1.600GHz 0.474 / ...

Page 11

freq S(1,1) 400.0MHz 0.478 / -159.612 600.0MHz 0.486 / -171.158 800.0MHz 0.484 / -178.409 1.000GHz 0.497 / 175.945 1.200GHz 0.502 / 175.031 1.400GHz 0.510 / 171.624 1.600GHz 0.521 / ...

Page 12

freq S(1,1) 400.0MHz 0.563 / -104.402 600.0MHz 0.516 / -127.090 800.0MHz 0.487 / -142.294 1.000GHz 0.475 / -153.788 1.200GHz 0.481 / -159.380 1.400GHz 0.485 / -165.686 1.600GHz 0.481 / ...

Page 13

freq S(1,1) 400.0MHz 0.456 / -149.263 600.0MHz 0.462 / -163.449 800.0MHz 0.461 / -172.072 1.000GHz 0.469 / -179.275 1.200GHz 0.474 / 179.103 1.400GHz 0.478 / 175.346 1.600GHz 0.488 / ...

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