TMF3202Z TACHYONICS [Tachyonics CO,. LTD], TMF3202Z Datasheet

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TMF3202Z

Manufacturer Part Number
TMF3202Z
Description
N-Channel Dual-Gate MOSFET
Manufacturer
TACHYONICS [Tachyonics CO,. LTD]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TMF3202Z
Manufacturer:
FUJI
Quantity:
12
N-Channel Dual-Gate MOSFET
- Gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
□ Absolute Maximum Ratings (T
Preliminary Specification
The TMF3202Z is an enhancement type N-channel field-effect
transistor. The source and substrate are interconnected. Internal
bias circuits enable DC stabilization and a very good cross-
modulation performance during AGC. Integrated diodes between
the gates and source protect against excessive input voltage
surges. The transistor has a SOT343 micro-miniature plastic
package.
- Gain controlled amplifier with AGC
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
Caution : Electro Static Discharge sensitive device, observe handling precaution
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
October. 2005.
Applications
Description
Features
Parameter
a
= 25 ℃)
Page 1 of 8
Symbol
T
V
P
I
G1
T
I
stg
DS
D
tot
j
http://www.tachyonics.co.kr
-65 ~ 150
Ratings
SOT343
± 10
200
150
10
30
1. SOURCE
2. DRAIN
2
1
TMF3202Z
3. GATE 2
4. GATE 1
Unit
mW
3
4
mA
mA
V
Unit in mm
Rev. 1.0

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TMF3202Z Summary of contents

Page 1

... Preliminary Specification N-Channel Dual-Gate MOSFET □ Description The TMF3202Z is an enhancement type N-channel field-effect transistor. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross- modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges ...

Page 2

... f=400MHz opt(NF) f=800MHz opt(NF) k=1%, fw=50MHz; funw=60MHz AGC = 0dB k=1%, fw=50MHz; mod funw=60MHz AGC = 10dB k=1%, fw=50MHz; funw=60MHz AGC = 40dB Page TMF3202Z MIN. MAX. =10㎂ =10㎃ G1-S =10㎃ G2-S =10㎃ 0.5 1.5 S-G1 =10㎃ 0.5 1.5 S-G2 =4V; I =100㎂ ...

Page 3

... C CIN C=4 tachyonics RGB 1 1 R=68 kOhm V_DC VGB Diode DIODE1 1 Fig1. Test Cross-modulation test set-up Page TMF3202Z □ Making 3 DB1 2 □ Pin Configuration PIN DESCRIPTION 1 SOURCE 2 DRAIN 3 GATE2 4 GATE1 V_DC VAGC CAGC C=4 ...

Page 4

... VG1-S [V] V G2-S Fig3. Output characteristics VG2= 1.50 2.00 2.50 VG1-S [ Fig5. Forward transfer admittance as a function Page TMF3202Z ℃ ℃ =5V drain current http://www.tachyonics.co. 1.4V 1.3V 1.2V 1. ...

Page 5

... G1 12 39KΩ 10 51KΩ 62KΩ 8 75KΩ 6 92KΩ 100KΩ VGG=VDS [ Fig9. Drain current as a function of gate2 voltage Page TMF3202Z 0 0.5 1 1 4V, R =62㏀ supply voltage ℃ 5V, T =62㏀ http://www ...

Page 6

... VG2-S [V] f=50MHz, Pin=-30dBm ℃ Fig11. Typical Gain reduction as a function gain reduction [dB] = 5V, R =62㏀ Page TMF3202Z 5V AGC Voltage ; see Fig1 http://www.tachyonics.co. VAGC [V] = 5V, R =62㏀ GB Rev. 1.0 ...

Page 7

... Fig14. Reverse transfer admittance and phase as a function of frequency 10.00 -100 100 1.00 10 -10 0. 0.01 1000 10 f [MHz 5V G2-S Fig16. Output admittance as a function of frequency http://www.tachyonics.co.kr Page TMF3202Z -1000 1000 φrs 100 -100 10 -10 |yrs 100 1000 f [MHz bos gos 100 1000 f [MHz Rev. 1.0 ...

Page 8

... Page TMF3202Z Reverse Transmission -20 -40 -60 -80 1E7 1E8 freq, Hz Output Reflection Coefficient freq (10.00MHz to 1.000GHz) S12 S12 Angle Angle Magnitude Magnitude (ratio) (ratio) (deg) (deg) (ratio) (ratio) 0.001 0.001 93.0 93 ...

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