CM75DY-34A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75DY-34A_09 Datasheet - Page 3

• Manufacturer Part Number: CM75DY-34A_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
150
100
10
10
10
10
50
COLLECTOR-EMITTER VOLTAGE V
EMITTER-COLLECTOR VOLTAGE V
0
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0.5
0
0
COLLECTOR-EMITTER SATURATION
T
V
j
GE
FORWARD CHARACTERISTICS
= 25°C
VOLTAGE CHARACTERISTICS
V
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
GE
1
20V
= 15V
T
T
2
=
FREE-WHEEL DIODE
j
j
= 25°C
= 125°C
1.5
50
(TYPICAL)
(TYPICAL)
(TYPICAL)
4
2
15
13
2.5
6
100
3
T
T
8
j
j
= 25°C
= 125°C
C
8
3.5
(A)
CE
EC
12
11
10
9
150
10
(V)
(V)
4
3
10
10
150
100
10
10
10
50
10
–2
–1
10
COLLECTOR-EMITTER VOLTAGE V
0
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
–1
V
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
CE
TRANSFER CHARACTERISTICS
GE
2
VOLTAGE CHARACTERISTICS
= 10V
3 5 7
= 0V
4
4
CAPACITANCE–V
CHARACTERISTICS
HIGH POWER SWITCHING USE
10
MITSUBISHI IGBT MODULES
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
8
8
2
3 5 7
12
12
CM75DY-34A
10
T
T
1
CE
T
j
j
I
I
I
C
C
C
2
= 25°C
= 125°C
j
16
16
= 25°C
GE
= 150A
= 75A
= 30A
GE
3 5 7
C
C
C
( V )
ies
oes
res
(V)
CE
20
20
10
(V)
2
Feb. 2009