CM75DY-34A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75DY-34A_09 Datasheet - Page 4

• Manufacturer Part Number: CM75DY-34A_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

SWITCHING TIME vs. COLLECTOR CURRENT
10
10
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
10
2
1
0
10
3
2
1
10
Conditions:
V
V
R
T
Inductive load
0
0
0
Conditions:
V
V
R
T
Inductive load
Conditions:
V
V
R
T
Inductive load
SWITCHING CHARACTERISTICS
j
CC
GE
G
j
CC
GE
CC
GE
j
G
G
= 125°C
= 125°C
= 25°C
COLLECTOR CURRENT I
COLLECTOR CURRENT I
= 6.4Ω
= 6.4Ω
= 6.4Ω
= 1000V
= ±15V
2
2
2
= 1000V
= ±15V
EMITTER CURRENT I
= 1000V
= ±15V
COLLECTOR CURRENT
OF FREE-WHEEL DIODE
SWITCHING LOSS vs.
3
3
3
HALF-BRIDGE
t
t
d(on)
d(off)
E
E
5 7
5 7
5 7
E
(TYPICAL)
(TYPICAL)
off
on
(TYPICAL)
I
t
rr
rr
rr
t
t
f
r
10
10
10
1
1
1
2
2
2
3
3
3
C
C
C
(A)
(A)
(A)
5 7
5 7
5 7
10
10
10
2
2
2
4
10
10
10
10
10
10
10
10
10
10
SWITCHING TIME vs. GATE RESISTANCE
–1
–2
–3
7
5
3
2
7
5
3
2
10
3
7
5
3
2
2
7
5
3
2
1
10
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
–5
0
0
IGBT part:
Per unit base = R
FWDi part:
Per unit base = R
Conditions:
V
V
I
T
Inductive load
2 3 57
SWITCHING CHARACTERISTICS
C
IMPEDANCE CHARACTERISTICS
CC
GE
j
= 75A
= 125°C
GATE RESISTANCE R
2
GATE RESISTANCE R
2
10
= 1000V
= ±15V
–4
(IGBT part & FWDi part)
TRANSIENT THERMAL
SWITCHING LOSS vs.
2 3 57
GATE RESISTANCE
3
3
HIGH POWER SWITCHING USE
t
t
d(off)
d(on)
E
E
HALF-BRIDGE
E
10
off
on
MITSUBISHI IGBT MODULES
5 7
5 7
rr
(TYPICAL)
(TYPICAL)
–3
t
t
f
r
2 3 57
TIME (s)
Single Pulse
Tc= 25°C
Tc measured point is
just under the chips
10
10
th(j–c)
th(j–c)
10
–2
1
1
2 3 57
CM75DY-34A
= 0.16K/W
= 0.29K/ W
Conditions:
V
V
I
T
Inductive load
2
2
10
C
j
CC
GE
–1
= 125°C
= 75A
2 3 57
3
3
G
G
= 1000V
= ±15V
(Ω)
(Ω)
10
5 7
5 7
0
2 3 57
10
10
10
2
2
1
Feb. 2009