SBR13003B1 WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd], SBR13003B1 Datasheet - Page 2

• Manufacturer Part Number: SBR13003B1
• Description: High Voltage Fast-SwitchingNPN Power Transistor
• Manufacturer: WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

Electrical
Electrical
S S S S y y y y mbol
V
V
V
I
h
ton
ts
tf
ts
tf
ts
tf
Electrical
Electrical Characteristics
CBO
FE
CEO(sus)
CE(sat)
BE(sat)
mbol
mbol
mbol
Note:
Note:
Note:
Note:
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
(Vbe=-1.5V)
DC Current Gain
Resist
Resist
Turn-on Time
Storage Time
Fall Time
Indu
Indu
Storage Time
Fall Time
Indu
Indu
Storage Time
Fall Time
Resist
Resisti i i i v v v v e e e e Lo
Induc c c c t t t t i i i i v v v v e e e e Load
Indu
Induc c c c t t t t i i i i v v v v e e e e Load
Indu
Pulse Test : Pulse width 300, Duty cycle 2%
Characteristics
Characteristics
Characteristics
Lo
Load
Load
Load
Load
Lo
Loa a a a d d d d
Load
Load
Par
Par
Par
Para a a a met
met
met
mete e e e r r r r
(T
C
=25
Steady,
Steady,
Steady,
Steady, keep
℃
unless otherwise noted)
keep
keep
keep you
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Vcb=700V
Vcb=700V, Tc=100℃
Vce=2V,Ic=0.5A
Vce=2V, Ic=1.0A
V
I
Tp=25㎲
V
I
L=0.35mH,Vclamp=300V
V
I
L=0.35mH,Vclamp=300V
B1
B2
B2
CC
CC
CC
=0.2A , I
=-0.5A
=-0.5A
you
you
you advance
=125V ,Ic=1A
=15V ,Ic=1A I
=15V ,Ic=1A I
T T T T es
es
es
est t t t Condi
advance
advance
advance
Condi
Condi
Condit t t t i i i i o o o o ns
B2
=-0.5A
Tc=100℃
B1
B1
ns
ns
ns
=0.2A ,
=0.2A ,
SBR13003B1
SBR13003B1
SBR13003B1
SBR13003B1
Min
Min
Min
Min
400
10
5
-
-
-
-
-
-
-
-
V V V V a a a a lue
0.15
0.12
0.15
T T T T y y y y p p p p
0.2
1.5
1.2
2.4
-
-
-
-
-
-
lue
lue
lue
Max
Max
Max
Max
0.3
0.5
1.0
1.0
1.2
1.0
5.0
1.0
3.0
0.4
4.0
0.3
5.0
0.4
30
25
-
Units
Units
Units
Units
mA
㎲
㎲
㎲
V
V
V
2/5