SBR13003B3 WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd], SBR13003B3 Datasheet - Page 2

• Manufacturer Part Number: SBR13003B3
• Description: High Voltage Fast-Switching NPN Power Transistor
• Manufacturer: WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

Electrical Characteristics
Symbol
V
V
V
I
h
ton
ts
tf
ts
tf
ts
tf
CBO
FE
2/5
CEO(sus)
CE(sat)
BE(sat)
Note:
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Collector-Emitter Saturation Voltage
Pulse Test : Pulse width 300, Duty cycle 2%
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
(Vbe=-1.5V)
DC Current Gain
Resistive Load
Turn-on Time
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Parameter
(T
C
=25
℃
unless otherwise noted)
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Vcb=700V
Vcb=700V, Tc=100℃
Vce=2V,Ic=0.5A
Vce=2V, Ic=1.0A
V
I
Tp=25㎲
V
I
L=0.35mH,Vclamp=300V
V
I
L=0.35mH,Vclamp=300V
B1
B1
B1
CC
CC
CC
.
=0.2A , I
=0.2A , I
=0.2A , I
=125V ,Ic=1A
=15V ,Ic=1A
=15V ,Ic=1A
Test Conditions
B2
B2
B2
=-0.5A
=-0.5A
=-0.5A
Tc=100℃
Min
400
10
5
-
-
-
-
-
-
-
-
Value
0.15
0.12
0.15
Typ
0.2
1.5
1.2
2.4
-
-
-
-
-
-
Max
0.3
0.5
1.0
1.0
1.2
1.0
5.0
1.0
3.0
0.4
4.0
0.3
5.0
0.4
30
25
-
Units
mA
㎲
㎲
㎲
V
V
V