BCP53-16 T/R NXP Semiconductors, BCP53-16 T/R Datasheet - Page 10

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BCP53-16 T/R

Manufacturer Part Number
BCP53-16 T/R
Description
power, pnp, transistor, Discretes (diodes, transistors, thyristors ...), Semiconductors and Actives, Transistors
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BC640_BCP53_BCX53_7
Product data sheet
Fig 10. DC current gain as a function of collector
Fig 12. Base-emitter voltage as a function of collector
(mV)
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
BE
1200
1000
FE
300
200
100
800
600
400
200
0
V
current; typical values
10
V
current; typical values
10
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
10
10
006aaa226
006aaa227
3
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 07 — 27 June 2007
4
4
Fig 11. Collector current as a function of
Fig 13. Collector-emitter saturation voltage as a
V
(mA)
(mV)
(1) T
(2) T
(3) T
CEsat
I
C
10
10
1.6
1.2
0.8
0.4
BC640; BCP53; BCX53
10
0
3
2
10
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
1
B
= 10
80 V, 1 A PNP medium power transistors
= 25 C
= 150 C
= 25 C
= 55 C
0.4
1
I
B
(2)
(mA) = 45
10
0.8
(1)
(3)
1.2
10
2
40.5
© NXP B.V. 2007. All rights reserved.
10
36
1.6
006aaa228
006aaa230
V
3
I
C
CE
(mA)
31.5
22.5
18
13.5
27
9
4.5
(V)
10
2.0
4
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