M24512-DRMN6TP STMicroelectronics, M24512-DRMN6TP Datasheet - Page 28

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M24512-DRMN6TP

Manufacturer Part Number
M24512-DRMN6TP
Description
EEPROM 512 Kbit serial I2C EEPROM 3 Chip
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24512-DRMN6TP

Product Category
EEPROM
Rohs
yes
DC and AC parameters
28/40
Table 15.
1. If the application uses the voltage range F device with 2.5 V < V
2. For devices identified by process letters K: I
3. Only for devices identified with process letter K.
4. Characterized value, not tested in production.
5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
CC
CC
LO
LI
OL
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24512-DF, device grade 6)
Table 13
Parameter
instead of this table.
Doc ID 16459 Rev 26
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
V
During t
Device not selected
V
1.7 V V
1.7 V V
1.7 V V
I
(t
Test conditions
f
OL
c
IN
CC
CC
IN
W
= 1 MHz
= 1 mA, V
= V
= V
CC
is triggered by the correct decoding of a Write instruction).
= 1.7 V, f
= 1.6 V, f
to those in
(max) = 1.5 mA.
SS
SS
W
CC
CC
CC
M24512-W M24512-R M24512-DR M24512-DF
or V
or V
(3)
< 2.5 V
< 2.5 V
< 2.5 V
c
c
CC
CC
= 400 kHz
= 400 kHz
CC
, V
= 1.7 V
(1)
Table
SS
CC
(in addition
(5)
or V
CC
,
= 1.7 V
8)
< 5.5 V and -40 °C < TA < +85 °C,
CC
0.75 V
0.75 V
–0.45
Min.
-
-
-
-
-
-
-
CC
CC
0.25 V
V
CC
0.8
Max.
5
± 2
± 2
2.5
0.8
6.5
0.2
1
(4)
+0.6
(2)
CC
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V

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