SST39VF320-70-4C-B3KE Microchip Technology, SST39VF320-70-4C-B3KE Datasheet - Page 9

• Manufacturer Part Number: SST39VF320-70-4C-B3KE
• Description: Flash 2M X 16 70ns
• Manufacturer: Microchip Technology

Specifications of SST39VF320-70-4C-B3KE

• Product Category: Flash
• Rohs: yes
• Memory Size: 32 Mbit
• Interface Type: Parallel
• Access Time: 70 ns
• Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Package / Case: TFBGA-48
• Organization: 2 MB x 16

32 Mbit Multi-Purpose Flash
SST39VF320
TABLE 8: DC O
TABLE 9: R
TABLE 10: C
TABLE 11: R
©2003 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
V
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB
ALP
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
IHC
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
2. The I
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
1
1
1
1
(room temperature), and V
higher minimum specification.
1,2
END
1
DD
1
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
Parameter
Power Supply Current
Read
Program and Erase
Standby V
Auto Low Power Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
current listed is typically less than 2mA/MHz, with OE# at V
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
ELIABILITY
2
PERATING
DD
Current
C
HARACTERISTICS
DD
C
S
= 3.0V. Not 100% tested.
YSTEM
HARACTERISTICS
P
OWER
V
V
0.7V
-
DD
DD
UP
Min
-0.3
-0.2
V
DD
T
DD
Minimum Specification
IMINGS
= 2.7-3.6V
Limits
100 + I
9
10,000
Max
0.8
0.2
18
35
20
20
10
100
1
IH.
Typical V
DD
1
Units
mA
mA
µA
µA
µA
µA
DD
V
V
V
V
is 3.0V.
Test Conditions
Address input=V
V
CE#=V
CE#=WE#=V
CE#=V
CE#=V
all inputs=V
V
V
V
V
V
I
I
OL
OH
Cycles
DD
IN
OUT
DD
DD
DD
Test Condition
Units
Years
=100 µA, V
=GND to V
=-100 µA, V
mA
=V
=V
=V
=V
Minimum
=GND to V
V
V
I/O
DD
DD
DD
DD
IN
IL
IHC
ILC
100
100
, OE#=WE#=V
= 0V
= 0V
Max
, V
Min
Max
Max
, V
SS
DD
Preliminary Specifications
DD
IL
DD
DD
JEDEC Standard A117
JEDEC Standard A103
or V
, OE#=V
=V
DD
=V
DD
JEDEC Standard 78
, V
=V
ILT
=V
DD
DD
, V
/V
DD
DD
DD
Test Method
DD
IHT
Max,
DD
Max
, WE#=V
=V
Min
S71143-02-000
IH
IH
, at f=5 MHz,
=V
Min
DD
, all I/Os open
Maximum
DD
Max
12 pF
Units
6 pF
Max
µs
µs
IHC
T8.11 1143
T10.0 1143
T11.3 1143
T9.0 1143
11/03