MCIMX6U5DVM10AB Freescale Semiconductor, MCIMX6U5DVM10AB Datasheet - Page 38

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MCIMX6U5DVM10AB

Manufacturer Part Number
MCIMX6U5DVM10AB
Description
Processors - Application Specialized i.MX6 DualLite
Manufacturer
Freescale Semiconductor
Type
Multimedia Applicationsr
Datasheet

Specifications of MCIMX6U5DVM10AB

Rohs
yes
Core
ARM Cortex A9
Processor Series
i.MX6
Data Bus Width
32 bit
Maximum Clock Frequency
1 GHz
Data Ram Size
256 kB
Operating Supply Voltage
1.175 V to 1.5 V
Mounting Style
SMD/SMT
Package / Case
FCBGA-624
Interface Type
I2C, I2S, SDIO, UART, USB
Memory Type
L1/L2 Cache, ROM, SRAM

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCIMX6U5DVM10AB
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Electrical Characteristics
4.6.2
The DDR I/O pads support LPDDR2 and DDR3/DDR3L operational modes.
4.6.2.1
The LPDDR2 interface mode fully complies with JESD209-2B LPDDR2 JEDEC standard release June,
2009.
38
1
2
3
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below
0.6 V, and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot
must be controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or
other methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, Vil or Vih. Monotonic input transition time is from 0.1 ns to 1 s.
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
Pull-down resistor (100_kΩ PD)
Pull-down resistor (100_kΩ PD)
Input Hysteresis(OVDD= 1.8V)
Input Hysteresis(OVDD=3.3V
Pull-up resistor (100_kΩ PU)
Pull-up resistor (100_kΩ PU)
Pull-up resistor (22_kΩ PU)
Pull-up resistor (22_kΩ PU)
Pull-up resistor (47_kΩ PU)
Pull-up resistor (47_kΩ PU)
Low-Level input voltage
Keeper Circuit Resistance
Input current (no PU/PD)
High-level output voltage
Schmitt trigger VT+
Low-level output voltage
Input Reference Voltage
Schmitt trigger VT-
DDR I/O DC Parameters
LPDDR2 Mode I/O DC Parameters
Parameters
i.MX 6Solo/6DualLite Applications Processors for Consumer Products, Rev. 1
2,3
2,3
1,2
Table 24. LPDDR2 I/O DC Electrical Parameters
Table 23. GPIO DC Parameters (continued)
VHYS_HighVDD
VHYS_LowVDD
RPU_100K
RPU_100K
RPD_100K
RPD_100K
RPU_22K
RPU_22K
RPU_47K
RPU_47K
R_Keeper
Symbol
VTH+
VOH
VTH-
VOL
Vref
VIL
IIN
Test Conditions
VI =.3*OVDD, VI = .7* OVDD
Ioh= -0.1mA
Iol= 0.1mA
VI = 0, VI = OVDD
OVDD=1.8V
OVDD=3.3V
Vin=oOVDD
Vin=OVDD
Vin=OVDD
Vin=OVDD
Vin=0V
Vin=0V
Vin=0V
Vin=0V
0.49*OVDD
0.9*OVDD
Min
1
0.5*OVD
250
250
105
-1
D
0
Freescale Semiconductor
0.51*OVDD
0.1*OVDD
0.3*OVD
0.5*OVD
Max
212
100
175
48
48
D
D
1
1
1
1
1
mV
mV
mV
mV
uA
uA
uA
uA
uA
uA
uA
uA
uA
V
Unit
V
V
V

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