CY7C1356C-166AXC Cypress Semiconductor Corp, CY7C1356C-166AXC Datasheet - Page 20

IC SRAM 9MBIT 166MHZ 100LQFP

CY7C1356C-166AXC

Manufacturer Part Number
CY7C1356C-166AXC
Description
IC SRAM 9MBIT 166MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1356C-166AXC

Memory Size
9M (512K x 18)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
166MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
3.5 ns
Maximum Clock Frequency
166 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
180 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
2
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2122
CY7C1356C-166AXC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1356C-166AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1356C-166AXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY7C1356C-166AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Document Number: 38-05538 Rev. *L
I
I
I
I
I
C
C
C
Θ
Θ
Note
DD
SB1
SB2
SB3
SB4
21. Tested initially and after any design or process changes that may affect these parameters.
Parameter
Parameter
Parameter
IN
CLK
I/O
JA
JC
Input capacitance
Clock input capacitance
Input/output capacitance
V
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
DD
[21]
operating supply
Description
Description
Description
[18, 19]
[21]
(continued)
V
f = f
Max V
≥ V
f = f
Max V
V
f = 0
Max V
V
f = f
Max V
V
T
V
Test conditions follow standard
test methods and procedures
for measuring thermal
impedance, per EIA/JESD51.
DD
IN
IN
IN
A
DD
IH
≤ 0.3 V or V
≤ 0.3 V or V
MAX
MAX
MAX
≥ V
= 25 °C, f = 1 MHz,
= Max, I
= 3.3 V V
or V
DD
DD
DD
DD
IH
Test Conditions
= 1/t
= 1/t
= 1/t
Test Conditions
, device deselected, V
, device deselected,
, device deselected,
, device deselected,
or V
IN
≤ V
OUT
CYC
CYC
CYC
IN
DDQ
IN
IN
IL
≤ V
= 0 mA,
,
> V
> V
= 2.5 V
IL
Test Conditions
DDQ
DDQ
, f = 0
− 0.3 V,
− 0.3 V,
IN
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
All speed grades
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
All speed grades
100 TQFP
100 TQFP
29.41
Max
6.13
Max
5
5
5
119 BGA
119 BGA
CY7C1354C, CY7C1356C
Max
34.1
14.0
Max
5
5
7
Min
165 FBGA
165 FBGA
Max
16.8
Max
3.0
5
5
7
Max
250
220
180
130
120
120
100
110
110
40
40
Page 20 of 32
°C/W
°C/W
Unit
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
pF
pF
pF
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