CY7C1380D-167AXI Cypress Semiconductor Corp, CY7C1380D-167AXI Datasheet

IC SRAM 18MBIT 167MHZ 100LQFP

CY7C1380D-167AXI

Manufacturer Part Number
CY7C1380D-167AXI
Description
IC SRAM 18MBIT 167MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1380D-167AXI

Memory Size
18M (512K x 36)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
167MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
3.4 ns
Maximum Clock Frequency
167 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
275 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
4
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2144
CY7C1380D-167AXI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1380D-167AXI
Manufacturer:
CYPRESS
Quantity:
1 100
Part Number:
CY7C1380D-167AXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1380D-167AXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Features
Selection Guide
Notes
Cypress Semiconductor Corporation
Document #: 38-05543 Rev. *F
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.
2. CE
Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 167 MHz
Registered inputs and outputs for pipelined operation
3.3V core power supply
2.5V or 3.3V I/O power supply
Fast clock-to-output times
Provides high performance 3-1-1-1 access rate
User selectable burst counter supporting Intel Pentium
leaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Single cycle chip deselect
CY7C1380D/CY7C1382D is available in JEDEC-standard
Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA
package; CY7C1380F/CY7C1382F is available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non
Pb-free 119-ball BGA and 165-ball FBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
ZZ sleep mode option
2.6 ns (for 250 MHz device)
3,
CE
2
are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable.
Description
198 Champion Court
®
inter-
250 MHz
350
2.6
70
Functional Description
The
SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM cells
with advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive edge triggered clock
input (CLK). The synchronous inputs include all addresses, all
data
depth-expansion chip enables (CE
inputs (ADSC, ADSP, and ADV), write enables (BW
and global write (GW). Asynchronous inputs include the output
enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address strobe
controller (ADSC) are active. Subsequent burst addresses can
be internally generated as they are controlled by the advance pin
(ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed write cycle.This part supports byte write
operations (see
for further details). Write cycles can be one to two or four bytes
wide as controlled by the byte write control inputs. GW when
active LOW causes all bytes to be written.
The
operates from a +3.3V core power supply while all outputs
operate with a +2.5 or +3.3V power supply. All inputs and outputs
are JEDEC-standard and JESD8-5-compatible.
18-Mbit (512K x 36/1M x 18)
inputs,
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
200 MHz
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
San Jose
300
3.0
70
Table 1
address-pipelining
,
CY7C1380D, CY7C1382D
CY7C1380F, CY7C1382F
CA 95134-1709
on page 6 and
167 MHz
Pipelined SRAM
275
3.4
70
2
and CE
Revised January 12, 2009
“Truth Table”
chip
3
[2]
enable
Unit
mA
mA
), burst control
ns
408-943-2600
X
, and BWE),
on page 10
(CE
1
[1]
),
[+] Feedback

Related parts for CY7C1380D-167AXI

CY7C1380D-167AXI Summary of contents

Page 1

... Synchronous self-timed write ■ Asynchronous output enable ■ Single cycle chip deselect ■ CY7C1380D/CY7C1382D is available in JEDEC-standard ■ Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA package; CY7C1380F/CY7C1382F is available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 119-ball BGA and 165-ball FBGA package IEEE 1149.1 JTAG-Compatible Boundary Scan ■ ...

Page 2

... Logic Block Diagram – CY7C1380D/CY7C1380F A0, A1, A ADDRESS REGISTER MODE ADV CLK ADSC ADSP DQ DQP BYTE BW D WRITE REGISTER DQ DQP BYTE BW C WRITE REGISTER DQ DQP BYTE BW B WRITE REGISTER DQ DQP BYTE A WRITE REGISTER BWE GW ENABLE CE 1 REGISTER SLEEP ZZ CONTROL Logic Block Diagram – CY7C1382D/CY7C1382F ...

Page 3

... Pin Configurations 100-Pin TQFP Pinout (3-Chip Enable) Figure 1. CY7C1380D, CY7C1380F(512K X 36) Document #: 38-05543 Rev. *F CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F Figure 2. CY7C1382D, CY7C1382F (1M X 18) Page [+] Feedback ...

Page 4

... A A TMS TDI TCK TDO Figure 4. CY7C1382F ( ADSP ADSC ADV CLK BWE DQP MODE NC/36M A TMS TDI TCK TDO CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F DDQ A NC/576M A NC/1G DQP DDQ DDQ DDQ DQP NC/36M DDQ DDQ A NC/576M A NC/1G DQP DDQ DDQ DDQ ...

Page 5

... DDQ DDQ N DQP DDQ P NC NC/72M A R MODE NC/36M NC/288M NC/144M A CE2 DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ N DQP DDQ P NC NC/72M A R MODE NC/36M A Document #: 38-05543 Rev. *F Figure 5. CY7C1380D/CY7C1380F (512K x 36 BWE CLK TDO TDI TCK TMS Figure 6 ...

Page 6

... ADSP is ignored and CE to select or deselect the device select or deselect the device sampled only when a new external address deasserted HIGH. 1 are placed in a tri-state condition. X CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F [2] , and CE are sampled active. A1 and BWE HIGH sampled 1 1 ...

Page 7

... No Connects. 36M, 72M, 144M, 288M, 576M, and 1G are address expansion pins and are not internally connected to the die. Document #: 38-05543 Rev This pin is not available on TQFP packages. SS CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F or left DD . This pin is not available This pin is not available on ...

Page 8

... Bytes not selected during a byte write operation remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F is a common I/O device, the output enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so tri-states the output drivers ...

Page 9

... Sleep mode standby current DDZZ t Device operation to ZZ ZZS t ZZ recovery time ZZREC t ZZ Active to sleep current ZZI t ZZ Inactive to exit sleep current RZZI Document #: 38-05543 Rev. *F CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F Table 2. Interleaved Burst Address Table (MODE = Floating or VDD) First Second Address Address A1 ...

Page 10

... CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F ADV WRITE OE CLK L-H Tri-State L-H Tri-State L-H Tri-State L-H Tri-State L-H Tri-State Tri-State L L-H Tri-State L L L-H Tri-State L L-H Tri-State L L-H Tri-State L-H Tri-State L L-H Tri-State L L Writes may occur only on subsequent clocks X Page [+] Feedback ...

Page 11

... Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write Bytes B, A Write All Bytes Write All Bytes Note 9. Table only lists a partial listing of the byte write combinations. Any combination of BW Document #: 38-05543 Rev. *F CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F GW BWE ...

Page 12

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1380D/CY7C1382D incorporates a serial boundary scan test access port (TAP).This part is fully compliant with 1149.1. The TAP operates using JEDEC-standard 3.3V or 2.5V I/O logic levels. The CY7C1380D/CY7C1382D contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register ...

Page 13

... It also places the instruction register between the TDI and TDO balls and enables Document #: 38-05543 Rev. *F CY7C1380D, CY7C1382D the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power up or whenever the TAP controller is given a test logic reset state ...

Page 14

... These instructions are not implemented but are reserved for future use. Do not use these instructions CYC TL t TMSS t TMSH t TDIS t TDIH t TDOX DON’T CARE UNDEFINED [10, 11] Over the Operating Range Description /t = 1ns CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F t TDOV Min Max Unit MHz ...

Page 15

... DDQ V = 2.5V DDQ I = 100 µ 3.3V OL DDQ V = 2.5V DDQ V = 3.3V DDQ V = 2.5V DDQ V = 3.3V DDQ V = 2.5V DDQ GND < V < DDQ CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F to 2.5V SS 1.25V 50Ω TDO Ω 20pF O Min Max Unit 2.4 V 2.0 V 2.9 V 2.1 V 0.4 V 0.4 V 0 ...

Page 16

... Bit Size (x36 Description CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F Description Describes the version number. Reserved for internal use. Defines the memory type and architecture. Defines the memory type and architecture. Defines the width and density. Allows unique identification of SRAM vendor. ...

Page 17

... BGA Boundary Scan Order Bit # Ball ID Bit # Notes 14. Balls which are NC (No Connect) are pre-set LOW. 15. Bit pre-set HIGH. Document #: 38-05543 Rev. *F CY7C1380D, CY7C1382D [14, 15] Ball ID Bit # Ball CY7C1380F, CY7C1382F Bit # Ball Internal Page [+] Feedback ...

Page 18

... K11 17 J11 18 M10 19 L10 20 K10 21 J10 H10 24 G11 25 F11 26 E11 27 D11 28 G10 29 F10 30 E10 Note 16. Bit pre-set HIGH. Document #: 38-05543 Rev. *F [14, 16] Bit # Ball ID 31 D10 32 C11 33 A11 34 B11 35 A10 36 B10 C10 CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F Bit # Ball Internal Page [+] Feedback ...

Page 19

... V ≤ /2), undershoot: V (AC) > –2V (pulse width less than t CYC IL (min.) within 200 ms. During this time V < V and CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F + 0.5V DD Ambient DDQ Temperature 0°C to +70°C 3.3V –5%/+10% 2.5V – –40°C to +85°C Min Max Unit 3.135 3 ...

Page 20

... V = 3.3V 2.5V DDQ 5 100 TQFP Test Conditions Package Test conditions follow standard 28.66 test methods and procedures for measuring thermal 4.08 impedance, in accordance with EIA/JESD51. CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 119 BGA 165 FBGA Unit Package Package 119 BGA 165 FBGA Unit ...

Page 21

... R = 317Ω 3.3V V DDQ GND 351Ω INCLUDING JIG AND (b) SCOPE R = 1667Ω 2.5V V DDQ GND 1538Ω INCLUDING JIG AND SCOPE (b) CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F ALL INPUT PULSES 90% 90% 10% 10% ≤ ≤ (c) ALL INPUT PULSES 90% 90% 10% 10% ≤ ≤ (c) Page [+] Feedback ...

Page 22

... V “AC Test Loads and Waveforms” and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 200 MHz 167 MHz Unit Max Min Max ...

Page 23

... CO t OEHZ t OELZ t DOH Q(A2 BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F A3 Burst continued with new base address Deselect cycle t CHZ Q( Q(A2) Q( Burst wraps around to its initial state is HIGH LOW HIGH ...

Page 24

... Document #: 38-05543 Rev. *F [26, 27] Figure 11. Write Cycle Timing ADSC extends burst t WES t WEH ADV suspends burst D(A2 BURST WRITE DON’T CARE UNDEFINED LOW. X CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F t ADS t ADH A3 t WES t WEH t t ADVH ADVS D( D(A3 Extended BURST WRITE ...

Page 25

... The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC. 29 HIGH. Document #: 38-05543 Rev. *F [26, 28, 29 WES t WEH OELZ D(A3) Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F A5 A6 D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page [+] Feedback ...

Page 26

... DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05543 Rev. *F [30, 31] Figure 13. ZZ Mode Timing ZZI I DDZZ High-Z DON’T CARE “Truth Table” on page 10 for all possible signal conditions to deselect the device. CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F t ZZREC t RZZI DESELECT or READ Only Page [+] Feedback ...

Page 27

... Fine-Pitch Ball Grid Array ( 1.4 mm) CY7C1382D-250BZI CY7C1380F-250BZI CY7C1382F-250BZI CY7C1380D-250BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) Pb-Free CY7C1382D-250BZXI CY7C1380F-250BZXI CY7C1382F-250BZXI Document #: 38-05543 Rev. *F http://app.cypress.com/portal/server.pt?space=CommunityPage&control=SetCom- Part and Package Type CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F www.cypress.com and refer Operating Range Commercial Industrial Page [+] Feedback ...

Page 28

... CY7C1382F-200BGXI CY7C1380D-200BZI 51-85180 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) CY7C1382D-200BZI CY7C1380F-200BZI CY7C1382F-200BZI CY7C1380D-200BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) Pb-Free CY7C1382D-200BZXI CY7C1380F-200BZXI CY7C1382F-200BZXI Document #: 38-05543 Rev. *F CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F Part and Package Type Operating Range Commercial Industrial Page [+] Feedback ...

Page 29

... Fine-Pitch Ball Grid Array ( 1.4 mm) CY7C1382D-167BZC CY7C1380F-167BZC CY7C1382F-167BZC CY7C1380D-167BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) Pb-Free CY7C1382D-167BZXC CY7C1380F-167BZXC CY7C1382F-167BZXC CY7C1380D-167AXI 51-85050 100-pin Thin Quad Flat Pack ( 1.4 mm) Pb-Free CY7C1382D-167AXI CY7C1380F-167AXI CY7C1382F-167AXI CY7C1380F-167BGI 51-85115 119-ball Ball Grid Array ( 2.4 mm) CY7C1382F-167BGI CY7C1380F-167BGXI 51-85115 119-ball Ball Grid Array ( ...

Page 30

... BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS A CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 1.40±0.05 12°±1° A ...

Page 31

... Package Diagrams (continued) Figure 15. 119-Ball BGA ( 2.4 mm) (51-85115) Document #: 38-05543 Rev. *F CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 51-85115-*B Page [+] Feedback ...

Page 32

... PACKAGE WEIGHT : 0.475g SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE WEIGHT : 0.475g PACKAGE CODE : BB0AC JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE CODE : BB0AC CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F BOTTOM VIEW PIN 1 CORNER BOTTOM VIEW PIN 1 CORNER Ø0. Ø ...

Page 33

... Document History Page Document Title: CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F, 18-Mbit (512K x 36/1M x 18) Pipelined SRAM Document Number: 38-05543 Submission Orig. of REV. ECN NO. Date Change ** 254515 See ECN RKF *A 288531 See ECN SYT *B 326078 See ECN PCI *C 416321 See ECN NXR *D 475009 See ECN VKN ...

Page 34

... All products and company names mentioned in this document may be the trademarks of their respective holders. PSoC Solutions psoc.cypress.com General clocks.cypress.com Low Power/Low Voltage Precision Analog LCD Drive image.cypress.com CAN 2.0b USB Revised January 12, 2009 CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F psoc.cypress.com/solutions psoc.cypress.com/low-power psoc.cypress.com/precision-analog psoc.cypress.com/lcd-drive psoc.cypress.com/can psoc.cypress.com/usb Page [+] Feedback ...

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