PSMN2R7-30BL,118 NXP Semiconductors, PSMN2R7-30BL,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN2R7-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R7-30BL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
24 V
40
6 V
(A)
I
S
100
V
80
60
40
20
60
0
DS
0
All information provided in this document is subject to legal disclaimers.
= 15 V
Q
003aad408
G
(nC)
0.2
80
Rev. 1 — 21 March 2012
T
0.4
j
= 175 °C
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
Fig 16. Input, output and reverse transfer capacitances
0.6
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
0.8
T
-1
j
003aad407
= 25 °C
V
SD
(V)
1
1
PSMN2R7-30BL
10
© NXP B.V. 2012. All rights reserved.
V
DS
003aad409
(V)
C
C
C
oss
rss
iss
10
2
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