PSMN2R7-30BL,118 NXP Semiconductors, PSMN2R7-30BL,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN2R7-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R7-30BL
Product data sheet
Fig 3.
10
10
(A)
I
10
D
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
= V
(1)
DS
All information provided in this document is subject to legal disclaimers.
/ I
D
1
Rev. 1 — 21 March 2012
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
DC
10
PSMN2R7-30BL
t
p
100 ms
10 ms
= 10 μs
100 μs
1 ms
V
DS
© NXP B.V. 2012. All rights reserved.
(V)
003aad382
10
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