PSMN3R4-30BL,118 NXP Semiconductors, PSMN3R4-30BL,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN3R4-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R4-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 114 W
• Factory Pack Quantity: 800

NXP Semiconductors
Table 7.
Tested to JEDEC standards where applicable.
PSMN3R4-30BL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(pF)
7000
6000
5000
4000
3000
2000
1000
C
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
3
…continued
6
9
All information provided in this document is subject to legal disclaimers.
V
003aad419
GS
(V)
C
C
Conditions
V
R
I
see
I
V
rss
iss
S
S
12
DS
GS
G(ext)
Rev. 1 — 22 March 2012
= 25 A; V
= 25 A; dI
Figure 17
= 15 V; R
= 0 V; V
= 4.7 Ω
GS
S
DS
N-channel 30 V 3.3 mΩ logic level MOSFET in D2PAK
/dt = -100 A/µs;
L
= 0 V; T
Fig 6.
= 0.5 Ω; V
= 15 V
160
120
(S)
g
80
40
fs
0
j
drain current; typical values
= 25 °C;
Forward transconductance as a function of
0
GS
= 4.5 V;
20
PSMN3R4-30BL
40
Min
-
-
-
-
-
-
-
60
Typ
40
73
59
28
0.7
36
28
© NXP B.V. 2012. All rights reserved.
80
003aad420
I
D
-
-
Max
-
-
-
1.2
-
(A)
100
Unit
ns
ns
ns
ns
V
ns
nC
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