PSMN3R4-30BL,118 NXP Semiconductors, PSMN3R4-30BL,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN3R4-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R4-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 114 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN3R4-30BL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
V
R
(mΩ)
GS (th)
(V)
DSon
12
3
2
1
0
9
6
3
0
-60
junction temperature
of drain current; typical values
0
V
GS
(V) = 2.8
20
0
40
max
min
typ
60
60
3
120
80
All information provided in this document is subject to legal disclaimers.
003aad414
003a a c982
T
I
j
D
(°C)
(A)
3.5
4.5
10
180
100
Rev. 1 — 22 March 2012
N-channel 30 V 3.3 mΩ logic level MOSFET in D2PAK
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
PSMN3R4-30BL
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2012. All rights reserved.
003aaa508
T
j
( ° C)
03aa27
180
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