BUK7628-100A /T3 NXP Semiconductors, BUK7628-100A /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK7628-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7628-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Resistance Drain-source Rds (on): 0.028 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 166 W
• Rise Time: 70 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 83 ns
• Part # Aliases: BUK7628-100A,118

NXP Semiconductors
BUK7628-100A
Product data sheet
Fig 3.
Fig 5.
I
(A)
DM
10
10
10
1
3
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
1
mb
R
DS(on)
= 25 °C; I
= V
D.C.
DS
10
DM
/ I
D
is single pulse
10
I
(A)
AV
10
2
t
10 μs
100 μs
1 ms
10 ms
100 ms
p
10
1
2
10
= 1 μs
V
−3
All information provided in this document is subject to legal disclaimers.
DS
003aaf153
T
(V)
j
prior to avalanche = 150 °C
10
10
Rev. 2 — 26 April 2011
3
−2
10
−1
Fig 4.
WDSS
(%)
120
80
40
0
1
20
avalanche energy rating; avalanche energy as a
function of mounting base temperature
I
Normalised drain-source non-repetitive
D
t
25 °C
AV
N-channel TrenchMOS standard level FET
= 75 A; unclamped inductive load
003aaf169
(ms)
10
60
BUK7628-100A
100
140
© NXP B.V. 2011. All rights reserved.
T
(mb)
003aaf168
(°C)
180
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