BUK7628-100A /T3 NXP Semiconductors, BUK7628-100A /T3 Datasheet - Page 5

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BUK7628-100A /T3

Manufacturer Part Number
BUK7628-100A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7628-100A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A
Resistance Drain-source Rds (on)
0.028 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
45 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
166 W
Rise Time
70 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
83 ns
Part # Aliases
BUK7628-100A,118
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7628-100A
Product data sheet
Symbol
R
R
Fig 6.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−7
All information provided in this document is subject to legal disclaimers.
δ = 0.5
0.05
0.02
0.2
0.1
0
10
−6
Conditions
minimum footprint; FR4 board
10
Rev. 2 — 26 April 2011
−5
10
−4
10
−3
P
10
−2
t
p
10
T
−1
N-channel TrenchMOS standard level FET
003aaf156
δ =
1
t
p
T
t
(s)
t
p
10
BUK7628-100A
Min
-
-
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.9
-
Unit
K/W
K/W
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