VS-ST183S08PFL1P Vishay Semiconductors, VS-ST183S08PFL1P Datasheet - Page 4

• Manufacturer Part Number: VS-ST183S08PFL1P
• Description: SCRs 195 Amp 800 Volt 306 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST183S08PFL1P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 5130 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

ST183SPbF Series
Vishay High Power Products
Note
• The table above shows the increment of thermal resistance R
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4
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
130
120
110
100
350
300
250
200
150
100
90
80
50
180°
120°
0
90°
60°
30°
0
0
Fig. 1 - Current Ratings Characteristics
20
20
Average On-State Current (A)
Average On-State Current (A)
RMS limit
40
40
30 °C
180°
120°
ST183S Series
R
60
90°
60°
30°
60
thJC
(DC) = 0.105 K/W
80
80
60 °C
100
100 120 140 160 180 200
CONDUCTION
SINUSOIDAL
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120
Conduction angle
ST183S Series
T
Conduction angle
90 °C
J
0.016
0.019
0.025
0.036
0.060
= 125 °C
140
120 °C
Ø
Ø
160
Inverter Grade Thyristors
Fig. 3 - On-State Power Loss Characteristics
180 °C
(Stud Version), 195 A
180 200
thJC
RECTANGULAR
when devices operate at different conduction angles than DC
CONDUCTION
0.012
0.020
0.027
0.037
0.060
350
300
250
200
150
100
130
120
110
100
50
90
80
70
0
Maximum Allowable Ambient Temperature (°C)
25
0
Fig. 2 - Current Ratings Characteristics
50
Average On-State Current (A)
TEST CONDITIONS
30°
T
J
50
= T
ST183S Series
R
100
thJC
60°
J
maximum
(DC) = 0.105 K/W
90°
150
120°
75
Document Number: 94369
200
Conduction period
180°
Revision: 30-Apr-08
250
100
DC
Ø
300
UNITS
K/W
350
125