VS-ST183S08PFL1P Vishay Semiconductors, VS-ST183S08PFL1P Datasheet - Page 5

• Manufacturer Part Number: VS-ST183S08PFL1P
• Description: SCRs 195 Amp 800 Volt 306 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST183S08PFL1P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 5130 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

Document Number: 94369
Revision: 30-Apr-08
4500
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4500
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3500
3000
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500
450
400
350
300
250
200
150
100
50
0
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
0.01
1
0
RMS limit
Number of Equal Amplitude Half Cycle
ST183S Series
ST183S Series
50
Average On-State Current (A)
180°
120°
DC
90°
60°
30°
Pulse Train Duration (s)
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
At any rated load condition and with
rated V
100
Current Pulses (N)
RRM
150
applied following surge
10
0.1
200
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No voltage reapplied
Rated V
Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction period
Initial T
ST183S Series
T
J
250
= 125 °C
J
RRM
= 125 °C
Inverter Grade Thyristors
J
Ø
= 125 °C
(Stud Version), 195 A
reapplied
300
Fig. 4 - On-State Power Loss Characteristics
350
100
1
10 000
0.001
1000
0.01
100
0.1
500
450
400
350
300
250
200
150
100
50
1
0.001
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Thermal Impedance Z
0
1.0
Fig. 7 - On-State Voltage Drop Characteristics
25
Vishay High Power Products
ST183S Series
Instantaneous On-State Voltage (V)
Steady state value
R
(DC operation)
T
thJC
Square Wave Pulse Duration (s)
1.5
J
= 125 °C
= 0.105 K/W
0.01
ST183SPbF Series
50
2.0
2.5
0.1
75
ST183S Series
3.0
T
thJC
J
= 25 °C
Characteristics
100
1
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3.5
4.0
10
125
5