FDC6392S_Q Fairchild Semiconductor, FDC6392S_Q Datasheet - Page 2

• Manufacturer Part Number: FDC6392S_Q
• Description: MOSFET 20V P-Ch PowerTrench Integrated
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6392S_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 2.2 A
• Resistance Drain-source Rds (on): 0.15 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SSOT-6
• Fall Time: 11 ns
• Forward Transconductance Gfs (max / Min): 6 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.96 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 13 ns

Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
Schottky Diode Characteristics
I
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
R
S
rr
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
R
FS
GS(th)
SD
F
DS(on)
iss
oss
rss
∆T
∆T
g
gs
gd
rr
G
GS(th)
DSS
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Leakage
Forward Voltage
Parameter
(Note 2)
(Note 2)
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
V
V
I
I
T
D
D
F
F
F
iF
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
R
R
= –2.2 A,
= 500mA
= 1 A
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
/d
= 25°C unless otherwise noted
= 20 V
= 10V
=–4.5 V, I
= –16 V,
= V
= –5 V,
= –10 V,
= –10 V,
= 0 V,
= 12 V,
= –12 V,
= –4.5 V, I
= –2.5 V, I
= –4.5 V, V
= –15 mV, f = 1.0 MHz
= –10 V,
= –4.5 V, R
= –4.5 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
D
=–2.2 A, T
I
V
V
V
I
I
V
I
I
I
D
D
D
D
D
D
D
S
DS
GS
DS
DS
GEN
GS
= –0.8 A
= –250 µA
= –250 µA
= –2.2 A
= –1.8 A
= –2.2 A
= –1 A,
= –2.2 A,
= 0 V
= 0 V
= –5 V
= 0 V
= 0 V,
T
T
T
T
T
T
T
T
= 6 Ω
J
J
J
J
J
J
J
J
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
J
(Note 2)
=125°C
Min Typ Max Units
–0.6
–20
–6
101
152
132
–1.0
–0.8
0.34
0.26
0.40
0.35
–16
369
148
3.7
7.6
5.4
1.2
5.2
11
13
80
39
14
55
3
6
8
4
1
1
–100
–1.5
–0.8
–1.2
0.35
0.45
0.42
100
150
200
211
400
200
5.2
0.4
–1
16
20
23
20
10
8
FDC6392S Rev C(W)
mV/°C
mV/°C
mΩ
mA
mA
µA
nA
nA
pF
pF
pF
nC
nC
nC
nS
nC
µA
µA
ns
ns
ns
ns
Ω
V
V
A
S
A
V
V
V