FDC6392S_Q Fairchild Semiconductor, FDC6392S_Q Datasheet - Page 5

• Manufacturer Part Number: FDC6392S_Q
• Description: MOSFET 20V P-Ch PowerTrench Integrated
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6392S_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 2.2 A
• Resistance Drain-source Rds (on): 0.15 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SSOT-6
• Fall Time: 11 ns
• Forward Transconductance Gfs (max / Min): 6 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.96 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 13 ns

Typical Characteristics
0.001
Figure 9. Schottky Diode Forward Voltage.
0.01
0.001
0.1
0.01
Figure 7. Gate Charge Characteristics.
5
4
3
2
1
0
1
0.1
0.00001
0
0
1
I
D
= -2.2A
T
J
= 125
D = 0.5
0.2
0.1
0.1
1
0.05
o
C
0.02
0.01
V
SINGLE PULSE
F
, FORWARD VOLTAGE (V)
0.0001
Q
g
, GATE CHARGE (nC)
0.2
2
V
Figure 11. Transient Thermal Response Curve.
T
DS
J
= 25
= -5V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0.3
3
0.001
o
C
-15V
0.4
4
-10V
0.01
0.5
5
0.1
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
Figure 10. Schottky Diode Reverse Current.
600
500
400
300
200
100
Figure 8. Capacitance Characteristics.
0
0
0
1
-V
DS
5
5
V
, DRAIN TO SOURCE VOLTAGE (V)
R
, REVERSE VOLTAGE (V)
C
C
C
ISS
OSS
RSS
T
J
T
= 125
10
J
= 25
10
10
o
o
C
C
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
- T
θJA
(t) = r(t) + R
A
= 180 °C/W
t
15
15
100
1
= P * R
t
2
FDC6392S Rev C(W)
V
f = 1MHz
GS
= 0 V
θJA
1
θJA
(t)
/ t
2
20
20
1000