BTA316X-600E/DG,12 NXP Semiconductors, BTA316X-600E/DG,12 Datasheet - Page 4

• Manufacturer Part Number: BTA316X-600E/DG,12
• Description: Triacs 600 V 16 A TO220F
• Manufacturer: NXP Semiconductors

Specifications of BTA316X-600E/DG,12

• Rohs: yes
• On-state Rms Current (it Rms): 16 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 600 V
• Holding Current (ih Max): 15 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Mounting Style: Through Hole
• Package / Case: TO-220F-3
• Factory Pack Quantity: 50

NXP Semiconductors
BTA316X_SER_B_C_E_1
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
Fig 4. RMS on-state current as a function of surge
(1) dI
I
TSM
(A)
10
10
10
3
2
10
t
f = 50 Hz;
T
duration; maximum values
p
h
T
-5
/dt limit
= 45 C
20 ms
(1)
10
-4
Rev. 01 — 11 April 2007
BTA316X series B, C and E
10
-3
Fig 5. RMS on-state current as a function of heatsink
16 A Three-quadrant triacs high commutation
temperature; maximum values
10
-2
I
T
T
j(init)
= 25 C max
t
t
p
p
© NXP B.V. 2007. All rights reserved.
(s)
003aab671
I
TSM
t
10
-1
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