BTA316X-600E/DG,12 NXP Semiconductors, BTA316X-600E/DG,12 Datasheet - Page 8

• Manufacturer Part Number: BTA316X-600E/DG,12
• Description: Triacs 600 V 16 A TO220F
• Manufacturer: NXP Semiconductors

Specifications of BTA316X-600E/DG,12

• Rohs: yes
• On-state Rms Current (it Rms): 16 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 600 V
• Holding Current (ih Max): 15 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Mounting Style: Through Hole
• Package / Case: TO-220F-3
• Factory Pack Quantity: 50

NXP Semiconductors
BTA316X_SER_B_C_E_1
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
V
GT(25 C)
V
GT
1.6
1.2
0.8
0.4
junction temperature
50
0
50
100
001aab101
T
j
( C)
150
Rev. 01 — 11 April 2007
BTA316X series B, C and E
Fig 8. Normalized gate trigger current as a function of
I
GT(25 C)
I
(1) T2 G
(2) T2+ G
(3) T2+ G+
GT
16 A Three-quadrant triacs high commutation
3
2
1
0
junction temperature
50
(1)
(2)
(3)
0
50
100
© NXP B.V. 2007. All rights reserved.
001aac669
T
j
( C)
150
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