BCP53-10 T/R NXP Semiconductors, BCP53-10 T/R Datasheet - Page 4

• Manufacturer Part Number: BCP53-10 T/R
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCP53-10 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 145 MHz
• Dc Collector/base Gain Hfe Min: 63 at 5 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 1000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BCP53-10,115

NXP Semiconductors
5. Limiting values
BCP53_BCX53_BC53PA
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
V
V
T
V
I
I
I
I
P
T
T
C
CM
B
BM
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
BCP53
BCX53
BC53PA
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 19 October 2011
BCP53; BCX53; BC53PA
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
amb
 1 ms
 1 ms
 25 C
80 V, 1 A PNP medium power transistors
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
65
© NXP B.V. 2011. All rights reserved.
Max
100
80
5
1
2
0.3
0.3
0.65
1.00
1.35
0.50
0.95
1.35
0.42
0.83
1.10
0.81
1.65
150
+150
+150
2
.
Unit
V
V
V
A
A
A
A
W
W
W
W
W
W
W
W
W
W
W
C
C
C
2
2
.
.
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