MT48H16M32LFCM-6 IT:B Micron Technology Inc, MT48H16M32LFCM-6 IT:B Datasheet - Page 68

• Manufacturer Part Number: MT48H16M32LFCM-6 IT:B
• Description: IC SDRAM 512MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-6 IT:B

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 105mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Figure 38: READ Without Auto Precharge
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
Bank
Row
Row
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a manual PRECHARGE.
Disable auto precharge
t CL
t CMS
Column m
T2
Bank
READ
t CMH
t CH
CL = 2
T3
NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t LZ
t AC
68
T4
NOP
D
OUT
t OH
t AC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
D
NOP
OUT
t OH
t AC
PRECHARGE
Single bank
All banks
Bank(s)
T6
D
OUT
t OH
t RP
PRECHARGE Operation
t AC
© 2007 Micron Technology, Inc. All rights reserved.
T7
NOP
D
OUT
t OH
t HZ
Don’t Care
T8
ACTIVE
Row
Bank
Row
Undefined