MT48H16M32LFCM-6 IT:B Micron Technology Inc, MT48H16M32LFCM-6 IT:B Datasheet - Page 80

• Manufacturer Part Number: MT48H16M32LFCM-6 IT:B
• Description: IC SDRAM 512MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-6 IT:B

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 105mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Power-Down
Figure 49: Power-Down Mode
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Command
BA0, BA1
Address
Precharge all
active banks
DQM
CKE
CLK
A10
DQ
High-Z
t CMS
t CKS
PRECHARGE
t AS
Single bank
All banks
Bank(s)
T0
t CMH
t CKH
t AH
Note:
Two clock cycles
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND IN-
HIBIT when no accesses are in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-down occurs when there is
a row active in any bank, this mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding CKE, for maximum power
savings while in standby. The device cannot remain in the power-down state longer
than the refresh period (64ms) because no REFRESH operations are performed in this
mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT with CKE
HIGH at the desired clock edge (meeting
All banks idle, enter
power-down mode
t CK
1. Violating refresh requirements during power-down may result in a loss of data.
T1
NOP
t CL
t CKS
T2
NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t CH
Input buffers gated off
while in power-down mode
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Exit power-down mode
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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t
CKS).
t CKS
Tn + 1
NOP
All banks idle
© 2007 Micron Technology, Inc. All rights reserved.
Tn + 2
Power-Down
ACTIVE
Row
Bank
Row
Don’t Care