M29W800DB70N6F NUMONYX, M29W800DB70N6F Datasheet - Page 16

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M29W800DB70N6F

Manufacturer Part Number
M29W800DB70N6F
Description
IC FLASH 8MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W800DB70N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W800DB70N6F
Manufacturer:
ST
0
Part Number:
M29W800DB70N6F
Manufacturer:
MICRON
Quantity:
20 000
3.6
3.6.1
3.6.2
Table 2.
1. X = V
Table 3.
1. X = V
16/52
Bus read
Bus write
Output disable
Standby
Read manufacturer code
Read device code
Bus read
Bus write
Output disable
Standby
Read manufacturer code
Read device code
Operation
Operation
IL
IL
or V
or V
IH
IH
Special bus operations
Additional bus operations can be performed to read the electronic signature and also to
apply and remove block protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require V
applied to some pins.
Electronic signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in
and
Block protection and blocks unprotection
Each block can be separately protected against accidental program or erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. Block protect and chip unprotect
operations are described in
Bus operations, BYTE = V
Bus operations, BYTE = V
.
.
Table
3, Bus operations.
V
V
V
V
V
V
V
V
V
V
E
X
E
X
IH
IL
IL
IL
IL
IH
IL
IL
IL
IL
V
V
V
V
V
G
X
IH
IH
V
V
IL
IL
IL
V
V
V
G
X
IH
IH
IL
IL
IL
Appendix C: Block
IL
IH
V
V
V
V
V
W
X
(1)
IH
IH
IH
IH
IL
(1)
V
V
V
V
V
W
X
IH
IH
IH
IH
IL
Cell address
Command address
X
X
A0 = V
V
A0 = V
V
ID
ID
DQ15A–1, A0-A18
, others V
, others V
Cell address
Command address
X
X
A0 = V
others V
A0 = V
others V
Address inputs
IL
IH
, A1 = V
, A1 = V
Address inputs
IL
IH
, A1 = V
IL
IL
, A1 = V
IL
IL
or V
or V
protection.
A0-A18
or V
or V
IL
IL
, A9 =
, A9 =
IH
IH
IH
IH
IL
IL
, A9 = V
, A9 = V
DQ14-DQ8
ID
ID
,
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
,
Data inputs/outputs
DQ15A–1, DQ14-DQ0
22D7h (M29W800DT)
225Bh (M29W800DB)
Data inputs/outputs
D7h (M29W800DT)
5Bh (M29W800DB)
Data output
Data input
0020h
Hi-Z
Hi-Z
Data output
Data input
DQ7-DQ0
Hi-Z
Hi-Z
20h
ID
Table 2
to be

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