M29W800DB70N6F NUMONYX, M29W800DB70N6F Datasheet - Page 29

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M29W800DB70N6F

Manufacturer Part Number
M29W800DB70N6F
Description
IC FLASH 8MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W800DB70N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W800DB70N6F
Manufacturer:
ST
0
Part Number:
M29W800DB70N6F
Manufacturer:
MICRON
Quantity:
20 000
Figure 10. AC measurement load circuit
Table 10.
1. Sampled only, not 100% tested.
Table 11.
1. Sampled only, not 100% tested.
Symbol
I
CC3
V
Symbol
I
I
V
V
V
V
I
CC1
CC2
V
I
I
LKO
LO
C
OH
ID
LI
OL
IH
ID
IL
C
OUT
(1)
IN
Input leakage current
Output leakage current
Supply current (read)
Supply current (standby)
Supply current (program/erase)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Identification voltage
Identification current
Program/erase lockout supply
voltage
Device capacitance
DC characteristics
Input capacitance
Output capacitance
Parameter
Parameter
V CC
C L includes JIG capacitance
0.1µF
(1)
DEVICE
UNDER
TEST
Test condition
V
V
OUT
0 V
RP = V
IN
E = V
E = V
0 V
controller active
Test condition
Program/erase
I
OH
I
= 0 V
OL
= 0 V
f = 6 MHz
A9 = V
= –100
V
IL
= 1.8 mA
CC
V
CC
OUT
, G = V
IN
± 0.2 V,
± 0.2 V
ID
C L
V
μ
V
CC
A
IH
CC
V CC
,
Min
AI04499
25k
25k
V
0.7V
CC
–0.5
11.5
Min
1.8
– 0.4
CC
Max
12
6
V
CC
Max
0.45
12.5
100
100
0.8
2.3
±1
±1
10
20
+ 0.3
Unit
pF
pF
Unit
29/52
mA
mA
μ
μ
μ
μ
V
V
V
V
V
V
A
A
A
A

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