AT45DB081D-MU Atmel, AT45DB081D-MU Datasheet - Page 51

IC FLASH 8MBIT 66MHZ 8VDFN

AT45DB081D-MU

Manufacturer Part Number
AT45DB081D-MU
Description
IC FLASH 8MBIT 66MHZ 8VDFN
Manufacturer
Atmel
Datasheet

Specifications of AT45DB081D-MU

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
8M (4096 pages x 264 bytes)
Speed
66MHz
Interface
SPI, RapidS
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Architecture
Sectored
Interface Type
SPI
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Mounting Style
SMD/SMT
Organization
64 KB x 16
Density
8Mb
Access Time (max)
6ns
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
MLF EP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Supply Current
15mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT45DB081D-MU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
28. Revision History
3596M–DFLASH–5/10
Revision Level – Release Date
A – November 2005
B – March 2006
C – July 2006
D – November 2006
E – February 2007
F – August 2007
G – January 2008
H – January 2008
I – April 2008
J – February 2009
K – March 2009
L – April 2009
M – May 2010
History
Initial Release
Added Preliminary.
Added text, in “Programming the Configuration Register”, to indicate
that power cycling is required to switch to “power of 2” page size
after the opcode enable has been executed.
Added “Legacy Commands” table.
Corrected PA3 in opcode 50h for addressing sequence with
standard page size. Corrected Chip Erase opcode from 7CH to
C7H. Clarified the commands B and C usage for operation mode.
Removed Preliminary.
Added errata regarding Chip Erase.
Changed various timing parameters under
Removed RDY/BUSY pin references.
Removed SER/BYTE statement from SI and SO pin descriptions in
Table 2-1.
Added additional text to “power of 2” binary page size option.
Changed t
Changed t
Added additional text, in “power of 2” binary page size option, to
indicate that the address format is changed for devices with page
size set to 256-bytes.
Corrected typographical error to indicate that Figure 13-1 indicates
Program Configuration Register.
Removed Atmel DataFlash card pinout.
Added part number ordering code details for suffixes SL954/955
Added ordering code details.
Changed t
Changed Deep Power-Down Current values
Updated Absolute Maximum Ratings
Removed Chip Erase Errata
Changed t
Changed t
Changed from 10,000 to 20,000 cumulative page erase/program
operations and added the please contact Atmel statement in section
11.3.
- Increased typical value from 5µA to 15µA.
- Increased maximum value from 15µA to25 µA.
VSCL
RDPD
DIS
SE
CE
(Typ) 1.6 to 0.7 and (Max) 5 to 1.3
(Typ) TBD to 7 and (Max) TBD to 22
(Typ and Max) to 27ns and 35ns, respectively.
from 50µs to 70µs.
from 30µs to 35µs.
Atmel AT45DB081D
Table
18-4.
51

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