MT45W4MW16BCGB-708 WT Micron Technology Inc, MT45W4MW16BCGB-708 WT Datasheet - Page 36

• Manufacturer Part Number: MT45W4MW16BCGB-708 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-708 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13:
Figure 25:
Table 14:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Description
Description
Partial-array
refresh standby
current
Deep power-down
80
70
60
50
40
30
20
10
0
–40 –30 –20 –10
Partial-Array Refresh Specifications and Conditions
Deep Power-Down Specifications
Typical Refresh Current vs. Temperature (I
V
IN
Conditions
CE# = V
Note:
Note:
= V
CC
Q or 0V,
CC
0
Q
I
changes to the PAR array partition or when entering standby mode. To achieve low
standby current, all inputs must be driven either to V
I
PAR
ZZ
(TYP) value applies across all operating temperatures and voltages.
10
(MAX) values are measured at 85°C. I
V
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Temperature (°C)
CC
, V
20
V
IN
CC
Conditions
= V
Q = 1.95V; +85°C
30
I
PAR
CC
Q or 0V;
40
Symbol
50
(no designation)
Standard power
60
36
Low-power
option (L)
70
TCR
80
)
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
PAR
90
ZZ
Array Partition
might be slightly higher for up to 500ms after
100
Full
Full
1/2
1/4
1/8
1/2
1/4
1/8
0
0
CC
Typ
3
Q or V
Electrical Characteristics
PAR = Full array
PAR = 1/2 of array
PAR = 1/4 of array
PAR = 1/8 of array
PAR = None of array
SS
©2005 Micron Technology, Inc. All rights reserved.
.
Max
Max
140
120
110
105
120
105
10
95
95
90
85
Unit
Unit
µA
µA
µA