MT45W4MW16BCGB-708 WT Micron Technology Inc, MT45W4MW16BCGB-708 WT Datasheet - Page 67

• Manufacturer Part Number: MT45W4MW16BCGB-708 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-708 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 54:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
DQ[15:0]
LB#/UB#
A[21:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
Asynchronous WRITE Followed by Asynchronous READ – ADV# LOW
High-Z
Notes:
Valid address
t AS
t CW
t WP
1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least
Data
t DH
5ns (
after CE#-controlled WRITEs.
t WPH
t WC
t
CPH) to schedule the appropriate refresh interval. Otherwise,
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Valid address
t AW
t BW
t DW
Data
t WR
High-Z
67
t HZ
Note 1
t CPH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
OH
OL
t BLZ
t LZ
t AA
Valid address
Don’t Care
t OLZ
©2005 Micron Technology, Inc. All rights reserved.
t OE
t
Timing Diagrams
CPH is only required
t HZ
output
Valid
t BHZ
Undefined
t HZ
t OHZ