CY7C1361B-100AC Cypress Semiconductor Corp, CY7C1361B-100AC Datasheet - Page 23

• Manufacturer Part Number: CY7C1361B-100AC
• Description: IC SRAM 9MBIT 100MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1361B-100AC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1504

Document #: 38-05302 Rev. *B
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in three-state ....................................... –0.5V to V
DC Input Voltage....................................–0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
I
Notes:
12. Overshoot: V
13. T
Parameter
X
OZ
OS
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0v to V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
Output Short Circuit
Current
V
Current
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DD
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
[12]
[12]
Over the Operating Range
V
V
V
V
V
V
V
V
V
V
GND ≤ V
Input = V
Input = V
Input = V
V
V
f = f
Max. V
V
inputs switching
Max. V
V
f = 0, inputs static
Max. V
V
f = f
Max. V
V
f = 0, inputs static
DD
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DD
DD
IN
IN
IN
IN
(min.) within 200ms. During this time V
≥ V
≥ V
≥ V
≥ V
MAX
MAX
= Max., V
= Max., I
= 3.3V
= 2.5V
= 3.3V, V
= 2.5V, V
= 3.3V, V
= 2.5V, V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
IH
DD
DDQ
DD
DD
DD
DD
DD
, inputs switching
= 1/t
or V
CYC
I
SS
DD
SS
DD
I
, Device Deselected,
, Device Deselected,
, Device Deselected,
, Device Deselected,
– 0.3V or V
– 0.3V or V
≤ V
≤ V
DDQ
– 0.3V or V
DD
/2), undershoot: V
IN
CYC
OUT
DDQ
DD,
OUT
≤ V
+ 0.5V
+ 0.5V
DD
DD
DD
DD
Output Disabled
= 0 mA,
IL
= Min., I
= Min., I
= Min., I
= Min., I
= GND
, f = f
IN
Test Conditions
IN
≤ 0.3V,
[12, 13]
IN
MAX,
≤ 0.3V,
≤ 0.3V,
IL
OH
OH
OL
OL
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
(AC) > -2V (Pulse width less than t
Commercial
Industrial
= 8.0 mA
= 1.0 mA
= –4.0 mA
= –1.0 mA
Range
IH
< V
All speeds
All speeds
All speeds
All Speeds
7.5-ns cycle, 133 MHz
8.8-ns cycle, 117 MHz
10-ns cycle, 100 MHz
DD
and V
–40°C to +85°C
Temperature
0°C to +70°C 3.3V – 5%/+10% 2.5V – 5%
Ambient
DDQ
< V
DD
CYC
/2).
3.135
3.135
2.375
Min.
–0.3
–0.3
–30
2.4
2.0
2.0
1.7
–5
–5
–5
V
DD
CY7C1361B
CY7C1363B
V
V
DD
DD
2.625
Max.
-300
V
250
220
180
3.6
0.4
0.4
0.8
0.7
30
40
30
40
40
+ 0.3V
+ 0.3V
DD
5
5
5
Page 23 of 34
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V