M24256-BWMN6P STMicroelectronics, M24256-BWMN6P Datasheet - Page 25

• Manufacturer Part Number: M24256-BWMN6P
• Description: IC EEPROM 256KBIT 400KHZ 8SOIC
• Manufacturer: STMicroelectronics

Specifications of M24256-BWMN6P

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 256K (32K x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8579-5; M24256-BWMN6P

M24256-BF, M24256-BR, M24256-BW, M24256-DR
Table 13.
1. Only for devices operating at f
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
V
I
I
CC0
CC1
V
completion of the internal write cycle t
I
LO
CC
OL
LI
IH
IL
(SCL, SDA, E0, E1,
Output low voltage
Input high voltage
Input high voltage
(WC, E0, E1, E2)
Input low voltage
(SCL, SDA, WC)
Standby supply
Output leakage
Supply current
Supply current
Input leakage
DC characteristics (voltage range W, device grade 6)
(SCL, SDA)
Parameter
current
current
current
(Read)
(Write)
E2)
C
max = 1 MHz (see
V
device in Standby mode
SDA in Hi-Z, external voltage applied on
SDA: V
V
(rise/fall time < 50 ns)
V
(rise/fall time < 50 ns)
2.5 V < V
(rise/fall time < 50 ns)
During t
Device not selected
V
Device not selected
V
I
I
OL
OL
Doc ID 6757 Rev 23
IN
CC
CC
CC
CC
= 2.1 mA, V
= 3 mA, V
= V
Test conditions (see
= 2.5 V
= 5.5 V
W
= 2.5 V, f
= 5.5 V, f
(t
SS
SS
W
W
CC
, 2.5 V < V
is triggered by the correct decoding of a Write instruction).
or V
or V
< 5.5 V, f
CC
c
c
CC
CC
= 400 kHz
= 400 kHz
CC
Table
Table
= 5.5 V
= 2.5 V or
(3)
(3)
CC
, V
, V
c
17).
10)
= 1 MHz
< 5.5 V
IN
IN
Table 7
= V
= V
SS
SS
(1)
or V
or V
and
CC
CC
,
,
DC and AC parameters
0.7V
0.7V
–0.45
Min.
CC
CC
V
0.3V
CC
Max.
5
± 2
± 2
2.5
6.5
0.4
1
2
2
3
(2)
+0.6
CC
25/42
Unit
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V