M27W401-80N6 STMicroelectronics, M27W401-80N6 Datasheet - Page 13

IC OTP 4KBIT 80NS 32TSOP

M27W401-80N6

Manufacturer Part Number
M27W401-80N6
Description
IC OTP 4KBIT 80NS 32TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M27W401-80N6

Format - Memory
EPROMs
Memory Type
OTP EPROM
Memory Size
4K (512 x 8)
Speed
80ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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M27W401
4
DC and AC parameters
T
Table 5.
1. V
2. Maximum DC voltage on Output is V
T
Table 6.
1. V
Symbol
A
A
Symbol
V
I
I
V
V
= –40 to 85°C; V
= 25 °C; V
I
IH
V
I
CC1
CC2
I
V
V
I
V
V
I
I
V
CC
LO
PP
I
OH
CC
LI
OL
PP
OH
CC
CC
IL
LI
OL
IH
ID
IL
(2)
must be applied simultaneously with or before V
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby)
CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
Read Mode DC Characteristics
Programming Mode DC Characteristics
CC
= 6.25V ± 0.25V; V
Parameter
Parameter
CC
= 2.7V to 3.6V; V
CC
+0.5V.
PP
= 12.75V ± 0.25V
E = V
E > V
PP
f = 5MHz, V
Test Condition
= V
I
0
OH
I
IL
0V
OL
CC
Test Condition
0V
, G = V
PP
PP
I
(1)
OH
E = V
CC
I
= –400 µA
V
OL
= 2.1 mA
V
– 0.2V, V
and removed simultaneously or after V
and removed simultaneously or after V
IN
PP
E = V
V
= –400µA
= 2.1mA
V
OUT
IN
= V
IL
IL
V
, I
CC
CC
IH
OUT
CC
V
(1)
CC
V
CC
CC
3.6V
= 0mA,
3.6V
–0.3
11.5
Min
2.0
2.4
DC and AC parameters
0.7V
Min.
–0.6
2.4
CC
V
V
CC
0.2V
Max
12.5
CC
±10
0.8
0.4
50
50
Max.
±10
±10
100
+ 0.5
0.4
15
15
PP
PP
1
+ 0.5
CC
.
.
Unit
Unit
mA
mA
13/23
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
A

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