M27W401-80N6 STMicroelectronics, M27W401-80N6 Datasheet - Page 5

• Manufacturer Part Number: M27W401-80N6
• Description: IC OTP 4KBIT 80NS 32TSOP
• Manufacturer: STMicroelectronics

Specifications of M27W401-80N6

• Format - Memory: EPROMs
• Memory Type: OTP EPROM
• Memory Size: 4K (512 x 8)
• Speed: 80ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M27W401
1
Summary description
The M27W401 is a low voltage 4 Mbit EPROM offered in the two ranges UV (ultra violet
erase) and OTP (one time programmable). It is ideally suited for microprocessor systems
requiring large data or program storage and is organised as 524,288 by 8 bits.
The M27W401 operates in the read mode with a supply voltage as low as 2.7V at –40 to
85°C temperature range. The decrease in operating power allows either a reduction of the
size of the battery or an increase in the time between battery recharges.
The FDIP32W (window ceramic frit-seal package) has a transparent lid which allows the
user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be
written to the device by following the programming procedure.
For application where the content is programmed only one time and erasure is not required,
the M27W401 is offered in PDIP32, PLCC32 and TSOP32 (8 x 20 mm) packages.
In order to meet environmental requirements, ST offers the M27W401 in ECOPACK®
packages. ECOPACK packages are Lead-free. The category of second Level Interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.
ECOPACK is an ST trademark. ECOPACK® specifications are available at: www.st.com.
See
signals connected to this device.
Figure 1.
Figure 1: Logic Diagram
Logic Diagram
A0-A18
and
G
E
Table 1: Signal descriptions
19
V CC
V SS
M27W401
V PP
8
Q0-Q7
AI01590
for a brief overview of the
Summary description
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