W25X10AVSNIG Winbond Electronics, W25X10AVSNIG Datasheet - Page 23

• Manufacturer Part Number: W25X10AVSNIG
• Description: IC FLASH 16MBIT 100MHZ 8SOIC
• Manufacturer: Winbond Electronics

Specifications of W25X10AVSNIG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 1M (128K x 8)
• Speed: 100MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

W25X10A, W25X20A, W25X40A, W25X80A
10.2.11 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state
of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure
2). The Sector Erase instruction sequence is shown in figure 12.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector
Erase instruction will commence for a time duration of t
(See AC Characteristics). While the Sector
SE
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Sector Erase
cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector
Erase instruction will not be executed if the addressed page is protected by the Block Protect (TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 12. Sector Erase Instruction Sequence Diagram
Publication Release Date: August 7, 2009
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Revision F