MC10XS3435DPNA Freescale Semiconductor, MC10XS3435DPNA Datasheet - Page 6

• Manufacturer Part Number: MC10XS3435DPNA
• Description: IC SWITCH HIGH SIDE QUAD 24QFN
• Manufacturer: Freescale Semiconductor
• Type: High Side Switchr

Specifications of MC10XS3435DPNA

• Number Of Outputs: 4
• Rds (on): 2 x 10 mOhm, 2 x 35 mOhm
• Internal Switch(s): Yes
• Current Limit: 5A
• Voltage - Input: 4 ~ 28 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 24-PQFN, 24-PowerQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 3. Maximum Ratings
permanent damage to the device.
6
10XS3435
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL RATINGS
THERMAL RATINGS
Notes
V
V
Input / Output Voltage
WAKE Input Clamp Current
CSNS Input Clamp Current
HS [0:3] Voltage
Output Current
HS[0,1] Output Clamp Energy using single pulse method
HS[2,3] Output Clamp Energy using single pulse method
ESD Voltage
Operating Temperature
Storage Temperature
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
PWR
DD
3.
4.
5.
6.
Load Dump at 25°C (400 ms)
Maximum Operating Voltage
Reverse Battery
Positive
Negative
Human Body Model (HBM) for HS[0:3], VPWR and GND
Human Body Model (HBM) for other pins
Charge Device Model (CDM)
Ambient
Junction
Supply Voltage Range
Supply Voltage Range
Continuous high side output current rating so long as maximum junction temperature is not exceeded. Calculation of maximum output
current using package thermal resistance is required.
Active clamp energy using single-pulse method (L = 2.0 mH, R
ESD testing is performed in accordance with the Human Body Model (HBM) (C
(C
Input / Output pins are: IN[0:3], RSTB, FSI, CSNS, SI, SCLK, CSB, SO, FSB
Corner Pins (1, 13, 19, 21)
All Other Pins (2-12, 14-18, 20, 22-24)
ZAP
(5)
= 200 pF, R
(3)
ZAP
= 0 Ω), and the Charge Device Model (CDM), Robotic (C
Ratings
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
(4)
(4)
L
= 0 Ω, V
PWR
= 14 V, T
ZAP
V
I
I
CL(WAKE)
Symbol
CL(CSNS)
V
E
E
ZAP
I
PWR(SS)
V
V
V
V
HS[0:3]
T
HS[0:3]
CL [0:1]
CL [2:3]
V
ESD1
ESD2
ESD3
ESD4
T
T
STG
= 100 pF, R
(6)
DD
A
J
= 4.0 pF).
J
= 150
Analog Integrated Circuit Device Data
ZAP
°
C initial).
-0.3 to V
= 1500 Ω), the Machine Model (MM)
-0.3 to 5.5
- 40 to 125
- 40 to 150
- 55 to 150
± 8000
± 2000
Value
± 750
± 500
100
-18
-24
2.5
2.5
6.0
41
28
41
35
DD
Freescale Semiconductor
+ 0.3
Unit
mA
mA
mJ
mJ
°C
°C
V
V
V
V
A
V