MAX17020ETJ+T Maxim Integrated Products, MAX17020ETJ+T Datasheet - Page 4

• Manufacturer Part Number: MAX17020ETJ+T
• Description: IC CTLR PWM DUAL STEP DN 32-TQFN
• Manufacturer: Maxim Integrated Products
• Series: Quick-PWM™r

Specifications of MAX17020ETJ+T

• Applications: Power Supplies
• Current - Supply: 1mA
• Voltage - Supply: 6 V ~ 24 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-TQFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dual Quick-PWM Step-Down Controller
with Low-Power LDO, RTC Regulator
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, no load on LDO, RTC, OUT1, OUT2, and REF, V
LDOREFIN = GND, ONLDO = IN, ON1 = ON2 = V
(Note 3)
4
LDO Short-Circuit Current
LDO Regulation Reduction/
Bypass Switchover Threshold
LDO Bypass Switchover
Threshold
LDO Bypass Switchover
Startup Timeout
LDO Bypass Switch Resistance
V
(UVLO) Threshold
Thermal-Shutdown Threshold
3.3V ALWAYS-ON LINEAR REGULATOR (RTC)
RTC Output-Voltage Accuracy
RTC Short-Circuit Current
REFERENCE (REF)
Reference Voltage
Reference Load-Regulation Error
REF Lockout Voltage
OUT1 FAULT DETECTION
OUT1 Overvoltage Trip
Threshold
OU T1 Over voltag e Faul t-
P r op ag ati on D el ay
OUT1 Undervoltage-Protection
Trip Threshold
OUT1 Output-Undervoltage
Fault-Propagation Delay
PGOOD1 Lower Trip Threshold
PGOOD1 Propagation Delay
PGOOD1 Output Low Voltage
PGOOD1 Leakage Current
CC
_______________________________________________________________________________________
Undervoltage-Lockout
PARAMETER
V
V
V
V
SYMBOL
I
I
t
I
ILIM(LDO)
U V L O( V C C )
ILIM(RTC)
R E F ( U V L O)
OV P ( OU T 1)
U V P ( OU T 1)
PGOOD1
PGOOD1
T
ΔV
V
V
t
t
t
SHDN
OVP
UVP
BYP
RTC
REF
REF
LDO = GND
With respect to the LDO voltage,
falling edge of BYP
With respect to the LDO voltage,
rising edge of BYP
Rising edge of BYP to bypass gate pulled low
LDO to BYP, V
Falling edge of V
PWM disabled below this threshold
Rising edge of V
Hysteresis = 10°C
ON1 = ON2 = GND, V
0 < I
ON1 = ON2 = ONLDO = GND,
V
RTC = GND
V
I
Rising edge, 350mV (typ) hysteresis
With respect to error-comparator threshold
FB1 forced 50mV above trip threshold
With respect to error-comparator threshold
With respect to error-comparator threshold,
falling edge, hysteresis = 1%
FB1 forced 50mV beyond PGOOD1 trip
threshold, falling edge
V
I
V
PGOOD1 forced to 5.5V, T
REF
SINK
IN
CC
FB1
FB1
CC
= 6V to 24V, 0 < I
, T
RTC
= 4.5V to 5.5V, I
= -20μA to 50μA
= 0.56V (PGOOD1 low impedance),
= 0.70V (PGOOD1 high impedance),
= 4mA
A
= 0°C to +85°C, unless otherwise noted. Typical values are at T
< 5mA
BYP
CONDITIONS
CC
CC
= 5V (Note 4)
,
REF
RTC
IN
IN
= 12V, V
= 6V to 24V,
= 0
< 5mA
A
= +25°C
DD
= V
CC
= V
SECFB
1.980
-11.0
3.23
3.19
MIN
100
-10
-19
3.8
13
65
5
= 5V, V
+160
TYP
3.33
2.00
1.95
-8.5
-6.5
500
1.2
4.0
4.2
-16
16
10
70
10
10
REFIN2
2.020
MAX
3.43
3.47
260
-6.0
+10
4.5
4.3
-13
0.3
30
19
75
= 1.0V, BYP =
1
A
= +25°C.)
UNITS
mA
mA
mV
μA
μs
°C
μs
μs
μs
%
%
%
%
%
Ω
V
V
V
V
V