ILQ620GB Vishay, ILQ620GB Datasheet - Page 2

• Manufacturer Part Number: ILQ620GB
• Description: OPTOCPLR PHOTOTRA 4CH 100% 16DIP
• Manufacturer: Vishay

Specifications of ILQ620GB

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 4
• Input Type: AC, DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 100% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): ±60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 16-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Output Device: Transistor
• Configuration: 4
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1332-5; ILQ620GBGI; ILQ620GBGI

ILD620, ILD620GB, ILQ620, ILQ620GB
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
Collector current
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
Isolation voltage
Total power dissipation
Package dissipation
Derate from 25 °C
Package dissipation
Derate from 25 °C
Creepage distance
Clearance distance
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
INPUT
Forward voltage
Forward current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Thermal resistance, junction to lead
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
(2)
For technical questions, contact:
Optocoupler, Phototransistor Output,
V
V
IO
2 mm from case bottom
T
IO
V
A
TEST CONDITION
V
= 500 V, T
TEST CONDITION
CE
= 500 V, T
F
= 85 °C, V
AC Input (Dual, Quad Channel)
= 0 V, f = 1 MHz
(1)
I
V
= 5 V, f = 1 MHz
F
V
R
= ± 10 mA
CE
(T
= ± 0.7 V
amb
t < 1 s
t = 1 s
= 24 V
amb
amb
amb
CE
= 25 °C, unless otherwise specified)
= 25 °C, unless otherwise specified)
= 24 V
= 100 °C
= 25 °C
[e-mail]
PART
ILD620GB
ILQ620GB
ILD620
ILQ620
PART
SYMBOL
R
R
C
I
I
C
CEO
CEO
V
I
thJL
thJL
CE
F
F
O
SYMBOL
BV
V
T
P
P
I
V
P
T
R
R
T
FSM
IORM
amb
I
diss
I
I
diss
T
ISO
stg
sld
CEO
C
C
tot
F
IO
IO
j
MIN.
1
- 55 to + 150
- 55 to + 100
TYP.
1.15
750
500
2.5
6.8
25
10
VALUE
2
≥ 10
≥ 10
± 1.5
5300
± 60
5.33
6.67
100
100
150
890
250
400
400
500
500
100
260
1.3
≥ 7
≥ 7
70
50
2
Document Number: 83653
12
11
MAX.
Rev. 1.5, 10-Dec-10
100
1.3
20
50
mW/°C
mW/°C
mW/°C
mW/°C
UNIT
V
mW
mW
mW
mW
mW
mW
mW
mm
mm
mA
mA
mA
RMS
V
°C
°C
°C
°C
Ω
Ω
A
V
P
UNIT
K/W
K/W
μA
pF
pF
nA
μA
V